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AS29LV400T-120BI PDF预览

AS29LV400T-120BI

更新时间: 2024-02-23 01:59:13
品牌 Logo 应用领域
ALSC 内存集成电路
页数 文件大小 规格书
27页 282K
描述
Flash, 256KX16, 120ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48

AS29LV400T-120BI 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:6 X 8 MM, 1.20 MM HEIGHT, BGA-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.63
最长访问时间:120 ns备用内存宽度:8
启动块:TOPJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM类型:NOR TYPE
宽度:6 mmBase Number Matches:1

AS29LV400T-120BI 数据手册

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ꢎꢏꢃꢈꢉꢐꢑꢑꢒ  
&
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• Organization: 512Kx8/ 256Kx16  
Sector architecture  
- 200 nA typical automatic sleep mode current  
- 200 nA typical standby current  
- 10 mA typical read current  
- One 16K; two 8K; one 32K; and seven 64K byte sectors  
- One 8K; two 4K; one 16K; and seven 32K word sectors  
- Boot code sector architecture—T (top) or B (bottom)  
- Erase any combination of sectors or full chip  
Single 2.7-3.6V power supply for read/ write operations  
Sector protection  
JEDEC standard software, packages and pinouts  
- 48-pin TSOP  
- 44-pin SO; availability TBD  
- 48-pin BGA  
• Detection of program/ erase cycle completion  
- DQ7 DATA polling  
• High speed 70/ 80/ 90/ 120 ns address access time  
Automated on-chip programming algorithm  
- Automatically programs/ verifies data at specified address  
Automated on-chip erase algorithm  
- Automatically preprograms/ erases chip or specified  
sectors  
- DQ6 toggle bit  
- DQ2 toggle bit  
- RY/ BY output  
Erase suspend/ resume  
- Supports reading data from or programming data  
to a sector not being erased  
• Hardware RESET pin  
Low V write lock-out below 1.5V  
CC  
- Resets internal state machine to read mode  
Low power consumption  
• 10 year data retention at 150C  
• 100,000 write/ erase cycle endurance  
ꢖꢌ-ꢄ+ꢉ.ꢃꢌ+/ꢉ,ꢄꢇ-ꢁꢇꢅ  
Sector protect/  
erase voltage  
switches  
RY/ BY  
DQ0DQ15  
V
CC  
V
SS  
Erase voltage  
generator  
Input/ output  
buffers  
RESET  
Program/ erase  
control  
WE  
BYTE  
Program voltage  
generator  
Command  
register  
STB  
Chip enable  
Output enable  
Logic  
Data latch  
CE  
OE  
A-1  
Y decoder  
Y gating  
STB  
V
detector  
Timer  
CC  
X decoder  
Cell matrix  
A0A17  
ꢔꢂꢃꢂ+ꢍꢄꢌꢆꢉ-ꢏꢄ,ꢂ  
29LV400-70  
29LV400-80  
29LV400-90  
29LV400-120  
Unit  
ns  
Maximum access time  
t
70  
70  
30  
80  
80  
30  
90  
90  
35  
120  
120  
50  
AA  
Maximum chip enable access time  
Maximum output enable access time  
t
ns  
CE  
t
ns  
OE  
8/ 9/ 01; V.0.9.9.1  
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P. 1 of 27  
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