5秒后页面跳转
AS29LV160 PDF预览

AS29LV160

更新时间: 2022-12-04 16:28:09
品牌 Logo 应用领域
ALSC 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
29页 529K
描述
3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

AS29LV160 数据手册

 浏览型号AS29LV160的Datasheet PDF文件第2页浏览型号AS29LV160的Datasheet PDF文件第3页浏览型号AS29LV160的Datasheet PDF文件第4页浏览型号AS29LV160的Datasheet PDF文件第5页浏览型号AS29LV160的Datasheet PDF文件第6页浏览型号AS29LV160的Datasheet PDF文件第7页 
ꢀꢕꢆꢖꢈꢙꢇ  
ꢀꢁꢂꢁꢃꢄꢅꢆꢇꢇꢈ  
ꢀꢉꢊꢋꢌꢍꢎꢉꢅꢏꢌꢐꢑꢒꢓꢋꢄꢔꢑꢌ  
&
ꢚꢘꢅꢆꢛꢅꢜꢅꢝꢅ ꢅꢈꢛꢅꢜꢅꢈꢙꢅ!ꢅ"ꢛ#ꢕꢅ$%ꢋꢃꢞꢅ''()#ꢛ  
$ꢎꢋꢄꢁꢒꢎꢃ  
• Organization: 2M×8 / 1M×16  
Sector architecture  
Low power consumption  
- 200 nA typical automatic sleep mode current  
- 200 nA typical standby current  
- 10 mA typical read current  
JEDEC standard software, packages and pinouts  
- 48-pin TSOP  
- 44-pin SO (availability TBD)  
CFI (Common Flash Interface) compliant  
Detection of program/ erase cycle completion  
- DQ7 DATApolling  
- DQ6 toggle bit  
- RY/ BYoutput  
- One 16K; two 8K; one 32K; and thirty-one 64K byte sectors  
- One 8K; two 4K; one 16K; and thirty-one 32K word sectors  
- Boot code sector architecture—T (top) or B (bottom)  
- Erase any combination of sectors or full chip  
Single 2.7-3.6V power supply for read/ write operations  
Sector protection  
• High speed 70/ 80/ 90/ 120 ns address access time  
Automated on-chip programming algorithm  
- Automatically programs/ verifies data at specified address  
Automated on-chip erase algorithm  
- Automatically preprograms/ erases chip or specified  
sectors  
Erase suspend/ resume  
- Supports reading data from or programming data to a  
sector not being erased  
• Hardware RESET pin  
- Resets internal state machine to read mode  
Low V write lock-out below 1.5V  
CC  
• 10 year data retention at 150C  
• 100,000 write/ erase cycle endurance  
ꢗꢑꢂꢔꢍꢅ*%ꢑꢍ+ꢅꢉꢔꢋꢂꢒꢋꢓ  
(ꢔꢌꢅꢋꢒꢒꢋꢌꢂꢎꢓꢎꢌꢄ  
48-pin TSOP  
44-pin SO  
Sector protect/  
erase voltage  
RY/ BY  
DQ0DQ15 (A-1)  
switches  
V
CC  
Reset  
A18  
A17  
A7  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
WE  
A19  
A8  
V
2
SS  
Erase voltage  
generator  
Input/ output  
buffers  
3
RESET  
4
A9  
A6  
5
A10  
A11  
A12  
A13  
A14  
A15  
A16  
BYTE  
Program/ erase  
control  
A5  
6
WE  
A4  
7
BYTE  
A3  
8
Program voltage  
generator  
A2  
9
Command  
register  
ꢊꢐꢗꢘꢛꢜꢝ  
A1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A0  
STB  
Chip enable  
Output enable  
Logic  
Data latch  
CE  
CE  
OE  
V
V
SS  
SS  
OE  
DQ0  
DQ15/ A-1  
DQ7  
DQ8  
DQ14  
DQ6  
Y decoder  
Y gating  
DQ1  
STB  
DQ9  
DQ13  
DQ5  
DQ2  
V
detector  
Timer  
CC  
DQ10  
DQ3  
DQ12  
DQ4  
X decoder  
Cell matrix  
DQ11  
VCC  
A0A19  
ꢕꢎ%ꢎꢍꢄꢔꢑꢌꢅꢂꢁꢔꢉꢎ  
29LV160-70  
29LV160-80 29LV160-90 29LV160-120  
Unit  
Maximum access time  
Maximum chip enable access time  
Maximum output enable access time  
t
70  
70  
30  
80  
80  
30  
90  
90  
35  
120  
120  
50  
ns  
ns  
ns  
AA  
t
CE  
t
OE  
8/ 30/ 01; V.0.9.5  
ꢀ%%ꢔꢋꢌꢍꢎꢅꢕꢎꢓꢔꢍꢑꢌꢉꢁꢍꢄꢑꢒ  
P. 1 of 29  
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉ'ꢉꢊꢋꢋꢅꢌꢍꢎꢏꢉꢐꢏꢑꢅꢎꢁꢍꢒꢓꢎꢈꢁꢄꢔꢉꢊꢋꢋꢉꢄꢅꢆꢇꢈꢕꢉꢄꢏꢕꢏꢄꢖꢏꢒꢔ  

与AS29LV160相关器件

型号 品牌 描述 获取价格 数据表
AS29LV160B ALSC 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

获取价格

AS29LV160B-120 ALSC Flash Memory

获取价格

AS29LV160B-70 ALSC Flash Memory

获取价格

AS29LV160B-80 ALSC Flash Memory

获取价格

AS29LV160B-90 ALSC Flash Memory

获取价格

AS29LV160T ALSC 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

获取价格