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A3966SLBTR-T PDF预览

A3966SLBTR-T

更新时间: 2024-01-20 03:02:33
品牌 Logo 应用领域
急速微 - ALLEGRO 驱动器运动控制电子器件信号电路光电二极管电动机控制PC
页数 文件大小 规格书
9页 805K
描述
DUAL FULL-BRIDGE PWM MOTOR DRIVER

A3966SLBTR-T 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP16,.4针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.66
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/755.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=755
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=7553D View:https://componentsearchengine.com/viewer/3D.php?partID=755
Samacsys PartID:755Samacsys Image:https://componentsearchengine.com/Images/9/A3966SLBTR-T.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/A3966SLBTR-T.jpgSamacsys Pin Count:16
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:16 SOICWSamacsys Released Date:2015-07-02 00:00:00
Is Samacsys:N其他特性:ALSO REQUIRES VCC TO 30V VBB SUPPLY
模拟集成电路 - 其他类型:STEPPER MOTOR CONTROLLERJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:10.3 mm
湿度敏感等级:3功能数量:2
端子数量:16最高工作温度:85 °C
最低工作温度:-20 °C最大输出电流:0.75 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:2.65 mm子类别:Motion Control Electronics
最大供电电流 (Isup):50 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:BIPOLAR
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:7.5 mmBase Number Matches:1

A3966SLBTR-T 数据手册

 浏览型号A3966SLBTR-T的Datasheet PDF文件第2页浏览型号A3966SLBTR-T的Datasheet PDF文件第3页浏览型号A3966SLBTR-T的Datasheet PDF文件第4页浏览型号A3966SLBTR-T的Datasheet PDF文件第5页浏览型号A3966SLBTR-T的Datasheet PDF文件第6页浏览型号A3966SLBTR-T的Datasheet PDF文件第7页 
3966  
DUAL FULL-BRIDGE PWM  
MOTOR DRIVER  
The A3966SA and A3966SLB are designed to drive both windings of a two-  
phase bipolar stepper motor. Each device includes two H-bridges capable of  
continuous output currents of ±650 mA and operating voltages to 30 V. Motor  
winding current can be controlled by the internal fixed-frequency, pulse-width  
modulated (PWM), current-control circuitry. The peak load current limit is set  
by the user’s selection of a reference voltage and current-sensing resistors.  
Except for package style and pinout, the two devices are identical.  
A3966SLB (SOIC)  
OUT  
1A  
16  
15  
14  
1
2
OUT  
2A  
V
BB  
PHASE  
PHASE  
2
1
1
Thefixed-frequencypulsedurationissetbyauser-selectedexternalRCtiming  
network. The capacitor in the RC timing network also determines a user-  
selectable blanking window that prevents false triggering of the PWM current-  
control circuitry during switching transitions.  
ENABLE  
ENABLE  
2
3
4
LOGIC  
LOGIC  
GROUND  
13 GROUND  
SENSE  
1
5
6
12 SENSE  
2
To reduce on-chip power dissipation, the H-bridge power outputs have been  
optimized for low saturation voltages. The sink drivers feature the Allegro®  
patented Satlington® output structure. The Satlington outputs combine the low  
voltage drop of a saturated transistor and the high peak current capability of a  
Darlington.  
OUT  
1B  
11 OUT  
2B  
V
BB  
LOAD  
SUPPLY  
LOGIC  
10  
7
8
V
CC  
SUPPLY  
REFERENCE  
V
RC  
9
RC  
REF  
Foreachbridge, aPHASEinputcontrolsload-currentpolaritybyselectingthe  
appropriatesourceandsinkdriverpair. Foreachbridge,anENABLEinput,when  
held high, disables the output drivers. Special power-up sequencing is not  
required. Internal circuit protection includes thermal shutdown with hysteresis,  
ground-clamp and flyback diodes, and crossover-current protection.  
Dwg. PP-066-1  
The A3966SA is supplied in a 16-pin dual in-line plastic package. The  
A3966SLB is supplied in a 16-lead plastic SOIC with copper heat sink tabs. The  
power tab is at ground potential and needs no electrical isolation. The A3966SLB  
isalsoavailableinalead(Pb)freeversion,with100%mattetinleadframeplating.  
ABSOLUTE MAXIMUM RATINGS  
Load Supply Voltage, VBB ...................... 30 V  
Output Current, IOUT (peak) ........... ±750 mA  
(continuous) .............................. ±650 mA  
Logic Supply Voltage, VCC .................... 7.0 V  
Input Voltage, Vin ........ -0.3 V to VCC + 0.3 V  
Sense Voltage, VS ................................ 1.0 V  
Package Power Dissipation (TA = 25°C), PD  
A3966SA ..................................... 2.08 W*  
A3966SLB ................................... 1.87 W*  
Operating Temperature Range,  
FEATURES  
±650 mA Continuous Output Current  
30 V Output Voltage Rating  
Internal Fixed-Frequency PWM Current Control  
Satlington Sink Drivers  
User-Selectable Blanking Window  
Internal Ground-Clamp & Flyback Diodes  
Internal Thermal-Shutdown Circuitry  
Crossover-Current Protection and UVLO Protection  
TA ..................................... -20°C to +85°C  
Junction Temperature,  
TJ .................................................. +150°C  
Storage Temperature Range,  
P art Num ber  
P b-free*  
P ackage  
P acking  
TS ................................... -55°C to +150°C  
A 3966S LB -T  
Yes  
Yes  
16-Lead S O IC  
16-Lead S O IC  
47 per tube  
Output current rating may be limited by duty cycle,  
ambient temperature, and heat sinking. Under any set  
of conditions, do not exceed the specified current rating  
or a junction temperature of 150°C.  
A 3966S LB TR-T  
1000 per reel  
*Pb-based variants are being phased out of the product line. The variants cited in this  
footnote are in production but have been determined to be LAST TIME BUY. This  
classification indicates that sale of this device is currently restricted to existing customer  
applications. The variants should not be purchased for new design applications because  
obsolescence in the near future is probable. Samples are no longer available. Status  
change: October 31, 2006. Deadline for receipt fo LAST TIME BUY orders: April 27, 2007.  
These variants include: A3966SA, A3966SLB, and A3966SLBTR.  
* Per SEMI G42-88 Specification, Thermal Test Board  
Standardization for Measuring Junction-to-Ambient  
Thermal Resistance of Semiconductor Packages.  

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