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A1323LUA-T PDF预览

A1323LUA-T

更新时间: 2024-02-16 21:23:03
品牌 Logo 应用领域
急速微 - ALLEGRO 传感器
页数 文件大小 规格书
11页 319K
描述
Ratiometric Linear Hall Effect Sensor for High-Temperature Operation

A1323LUA-T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.89
Is Samacsys:N主体宽度:1.55 mm
主体高度:3.03 mm主体长度或直径:4.1 mm
外壳:PLASTICJESD-609代码:e0
线性度 (%):1 %最大磁场范围:10 mT
安装特点:THROUGH HOLE MOUNT最大工作电流:8 mA
最大输出电流:-1.5 mA输出范围:0.20-4.70V
输出类型:ANALOG VOLTAGE封装形状/形式:RECTANGULAR
电阻:1.5 Ω灵敏度(mV / G):2.5 mV/G
传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECT表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端接类型:SOLDER
Base Number Matches:1

A1323LUA-T 数据手册

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A1321, A1322, and A1323  
Ratiometric Linear Hall Effect Sensor  
for High-Temperature Operation  
Features and Benefits  
Temperature-stable quiescent output voltage  
Precise recoverability after temperature cycling  
Description  
TheA132X family of linear Hall-effect sensors are optimized,  
sensitive,andtemperature-stable.TheseratiometricHall-effect  
Output voltage proportional to magnetic flux density  
Ratiometric rail-to-rail output  
Improved sensitivity  
4.5 to 5.5 V operation  
Immunity to mechanical stress  
Solid-state reliability  
sensors provide a voltage output that is proportional to the  
applied magnetic field. The A132X family has a quiescent  
output voltage that is 50% of the supply voltage and output  
sensitivity options of 2.5mV/G, 3.125mV/G, and 5mV/G. The  
features of this family of devices are ideal for use in the harsh  
environments found in automotive and industrial linear and  
rotary position sensing systems.  
Robust EMC protection  
EachdevicehasaBiCMOSmonolithiccircuitwhichintegrates  
a Hall element, improved temperature-compensating circuitry  
to reduce the intrinsic sensitivity drift of the Hall element,  
a small-signal high-gain amplifier, and a rail-to-rail low-  
impedance output stage.  
Packages: 3 pin SOT23W (suffix LH), and  
3 pin SIP (suffix UA)  
A proprietary dynamic offset cancellation technique, with  
an internal high-frequency clock, reduces the residual offset  
voltage normally caused by device overmolding, temperature  
dependencies, and thermal stress. The high frequency clock  
allows for a greater sampling rate, which results in higher  
accuracyandfastersignalprocessingcapability.Thistechnique  
producesdevicesthathaveanextremelystablequiescentoutput  
voltage, are immune to mechanical stress, and have precise  
Continued on the next page…  
Not to scale  
Functional Block Diagram  
V+  
VCC  
VOUT  
Out  
Amp  
Gain  
Offset  
0.1 μF  
Trim  
Control  
GND  
A1321-DS, Rev. 8  

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