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EM-0711 PDF预览

EM-0711

更新时间: 2024-01-10 06:14:22
品牌 Logo 应用领域
AKM 传感器换能器磁场传感器输出元件
页数 文件大小 规格书
3页 120K
描述
EM-0711 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC

EM-0711 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84

EM-0711 数据手册

 浏览型号EM-0711的Datasheet PDF文件第2页浏览型号EM-0711的Datasheet PDF文件第3页 
Monolithic Hall Effect ICsꢀEM-series  
Shipped in packet-tape reel(5000pcs/Reel)  
EM-0711 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC.  
EM-0711  
Bipolar Hall  
Supply Voltage  
Power down  
Function  
Ultra High  
Sensitivity  
Bop1.8mT  
Output  
CMOS  
SON  
Effect Latch  
1.6~5.5V  
Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue.  
●Operational Characteristics  
Vout  
N
H
VoH  
Marking  
1:VDD  
1
2
2:VSS  
3:PDN  
4:OUT  
Bh  
L
VOL  
S
S-pole  
0
N-pole  
Brp  
Bop  
Magnetic flux density  
●Absolute Maximum Ratings(Ta=25℃)  
●Functional Block Diagram  
1:VDD  
Item  
Symbol  
Limit  
Unit  
3:PDN  
Switch  
V
V
VDD  
0.1 6.0  
0.1 VDD0.1  
±10  
Supply Voltage  
PDN input voltage  
PDN input current  
Output Current  
Operating Temperature Range  
Storage Temperature Range  
V
in  
4:OUT  
2:VSS  
mA  
mA  
I
in  
I
±0.5  
out  
Topr  
Tstg  
30 ~ +85  
40 ~ +125  
Oscillator Hall  
Chopper  
Schmitt Latch  
Output  
Stage  
Amplifier  
&
Element Stabilizer  
Trigger  
&
Logic  
Timing  
Magnetic q and Electrical CharacteristicsTa=25℃ VDD=3.0V)  
Magnetic Characteristics w(Ta=-30~+85℃ VDD=3.0V)  
Item  
Symbol Conditions  
Min.  
Typ.  
Max.  
Unit  
Item  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Supply Voltage  
Operating Point  
Release Point  
H y s t e r e s i s  
PDN input High voltage  
PDN input Low voltage  
Operating Point  
Release Point  
H y s t e r e s i s  
1.6  
5.5  
4.0  
V
mT  
mT  
mT  
V
VDD  
BOP  
BOP  
1.8  
-4.2 -1.8  
3.6  
4.2  
mT  
mT  
mT  
1.8  
1.8  
3.6  
B
rp  
B
4.0  
B
h
rp  
Note) The above specifications are design targets.  
B
h
V
0.7VDD  
VDD 0.4  
IH  
V
0.3  
V
IL  
V
V
Io=0.5mA  
Io=0.5mA  
Output High Voltage  
Output Low Voltage  
OH  
0.4  
1
V
V
OL  
2
μA  
mA  
μA  
μsec  
μsec  
IDD1 PDN=L  
Supply Current1*  
2
2.5  
6
IDD2 PDN=H,Average  
Supply Current2*  
1  
1
I
PDN input Current  
PDN mode transition time1  
PDN mode transition time2  
in  
100  
100  
T
T
1
2
Active→PDN  
PDNActive  
PD  
PD  
1mT=10Gauss]  
*1: Positive(“+) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor BopBrp)  
*2: In case of PDN pin is held at VDD or VSS.  
15  

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