Datasheet > UTO-509

UTO-509

更新时间： 2024-02-04 08:39:53

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
6页	60K
描述
RF/Microwave Amplifier, 1 Func, BIPolar

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技术参数
数据手册

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UTO-509 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.67	其他特性：	LOW NOISE
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12 dB	最大输入功率 (CW)：	15 dBm
最大工作频率：	500 MHz	最小工作频率：	5 MHz
最高工作温度：	85 °C	最低工作温度：	-55 °C
射频/微波设备类型：	WIDE BAND MEDIUM POWER	最大电压驻波比：	2
Base Number Matches：	1

UTO-509 数据手册

Avantek Products

Thin-Film Cascadable Amplifier

5 to 500 MHz

Technical Data

UTO/UTC/PPA 509 Series

Pin Configuration

Features

Description

UTO—TO-8T

• Frequency Range: 5 to

500MHz

The 509 Series is a wideband

single stage high power bipolar RF

amplifier using thin-film construc-

tion with two transistors in

parallel for better RF and thermal

performance. Resistive feedback

and active bias provide for

temperature compensation and

increased immunity to bias

voltage variations. Blocking

capacitors couple the RF through

the amplifier. The 509 Series

amplifiers are available in three

packages: the surface mount

PlanarPak PP-38 (.375 in. x

.375in.) case, the TO-8 hermetic

case and the connectorized TC-1

case.

GROUND

OUT

• High Dynamic Range

• Output Power: +22.3 dBm

( Typ)

CASE GROUND

• Noise Figure: 4.5 dB ( Typ)

• Temperature Compensated

• Surface Mount Option

• Low Phase Noise

UTC—TC-1

OUT

PPA—PP-38

Applications

• IF/RF Amplification

• Output Stage

OUT

• Surface Mount Assembly

GROUND

Maximum Ratings

Parameter

Maximum

DC Voltage

+17 Volts

Continuous RF Input Power

Operating Case Temperature

Storage Temperature

+15 dBm

–55 to +115°C

–62 to +150°C

+115°C

“R” Series Burn-In Temperature

Thermal Characteristics¹

θ_JC

75°C/W

413 mW

31°C

Active Transistor Power Dissipation

Junction Temperature Above Case Temperature

MTBF (MIL-HDBK-217E, A_UF@ 90°C)

486,500 Hrs.

Note 1: For further information, see Reliability Screening, Pub. 5963-3240E.

Weight: (typical) PPA—0.5 grams; UTO—2.1 grams; UTC—21.5 grams

12 3 4 5 6

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