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AMMC-5620-W50 PDF预览

AMMC-5620-W50

更新时间: 2024-01-26 11:15:46
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 184K
描述
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier

AMMC-5620-W50 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:DIE OR CHIPReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.1Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:16 dB最大输入功率 (CW):20 dBm
功能数量:1最大工作频率:20000 MHz
最小工作频率:6000 MHz封装等效代码:DIE OR CHIP
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:130 mA
技术:GAASBase Number Matches:1

AMMC-5620-W50 数据手册

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Agilent AMMC-5620  
6 - 20 GHz High Gain Amplifier  
Data Sheet  
Features  
• Frequency Range: 6 - 20 GHz  
• High Gain: 19 dB Typical  
• Output Power: 15dBm Typical  
• Input and Output Return Loss: < -10  
dB  
• Positive Gain Slope: + 0.21dB/GHz  
Typical  
Chip Size:  
Chip Size Tolerance:± 10µm (± 0.4 mils)  
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)  
1410 x 1010 µm (55.5 x 39.7 mils)  
• Single Supply Bias: 5 V @ 95 mA  
Typical  
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)  
Applications  
• General purpose, wide-band  
amplifier in communication  
systems or microwave  
instrumentation  
Description  
Agilent’s AMMC-5620 MMIC is a  
GaAs wide-band amplifier  
designed for medium output  
power and high gain over the 6  
20 GHz frequency range. The  
3 cascaded stages provide high  
gain while the single bias  
supply offers ease of use. It is  
fabricated using a PHEMT  
integrated circuit process. The  
RF input and output ports have  
matching circuitry for use in  
50-environments. The  
backside of the chip is both RF  
and DC ground. This helps  
simplify the assembly process  
and reduces assembly related  
performance variations and  
costs. The MMIC is a cost  
effective alternative to hybrid  
(discrete FET) amplifiers that  
require complex tuning and  
assembly processes.  
• High gain amplifier  
[1]  
AMMC-5620 Absolute Maximum Ratings  
Symbol  
Parameters/Conditions  
Drain Supply Voltage  
Total Drain Current  
DC Power Dissipation  
RF CW Input Power  
Channel Temp.  
Units  
V
Min.  
Max.  
7.5  
V
DD  
I
mA  
W
135  
1.0  
DD  
P
P
T
DC  
in  
dBm  
°C  
20  
+150  
ch  
T
Operating Backside Temp.  
Storage Temp.  
°C  
-55  
-65  
b
T
°C  
+165  
+300  
stg  
T
Maximum Assembly Temp. (60 sec max) °C  
max  
Note:  
1. Operation in excess of any one of these conditions may result in permanent damage to this device.  
Note: These devices are ESD sensitive. The following precautions are strongly recommended:  
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.  
Personal grounding is to be worn at all times when handling these devices.  

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