Agilent AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Features
• Frequency Range: 6 - 20 GHz
• High Gain: 19 dB Typical
• Output Power: 15dBm Typical
• Input and Output Return Loss: < -10
dB
• Positive Gain Slope: + 0.21dB/GHz
Typical
Chip Size:
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
1410 x 1010 µm (55.5 x 39.7 mils)
• Single Supply Bias: 5 V @ 95 mA
Typical
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
Applications
• General purpose, wide-band
amplifier in communication
systems or microwave
instrumentation
Description
Agilent’s AMMC-5620 MMIC is a
GaAs wide-band amplifier
designed for medium output
power and high gain over the 6
− 20 GHz frequency range. The
3 cascaded stages provide high
gain while the single bias
supply offers ease of use. It is
fabricated using a PHEMT
integrated circuit process. The
RF input and output ports have
matching circuitry for use in
50-Ω environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
• High gain amplifier
[1]
AMMC-5620 Absolute Maximum Ratings
Symbol
Parameters/Conditions
Drain Supply Voltage
Total Drain Current
DC Power Dissipation
RF CW Input Power
Channel Temp.
Units
V
Min.
Max.
7.5
V
DD
I
mA
W
135
1.0
DD
P
P
T
DC
in
dBm
°C
20
+150
ch
T
Operating Backside Temp.
Storage Temp.
°C
-55
-65
b
T
°C
+165
+300
stg
T
Maximum Assembly Temp. (60 sec max) °C
max
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.