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5082-2900 PDF预览

5082-2900

更新时间: 2024-02-27 08:32:48
品牌 Logo 应用领域
安捷伦 - AGILENT 微波混频二极管
页数 文件大小 规格书
6页 57K
描述
Schottky Barrier Diodes for General Purpose Applications

5082-2900 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:O-LALF-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.34Is Samacsys:N
最小击穿电压:10 V外壳连接:ISOLATED
配置:SINGLE最大二极管电容:1.2 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
最大正向电压 (VF):1 VJESD-30 代码:O-LALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:100 °C
最低工作温度:-60 °C最大输出电流:0.02 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.1 W
认证状态:Not Qualified最大重复峰值反向电压:10 V
最大反向电流:0.1 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

5082-2900 数据手册

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Schottky Barrier Diodes for  
General Purpose Applications  
Technical Data  
1N5711  
1N5712  
5082-2300 Series  
5082-2800 Series  
5082-2900  
Features  
• Low Turn-On Voltage  
The 5082-2835 is a passivated  
Schottky diode in a low cost glass  
package. It is optimized for low  
turn-on voltage. The 5082-2835 is  
particularly well suited for the  
UHF mixing needs of the CATV  
marketplace.  
Outline 15  
0.41 (.016)  
0.36 (.014)  
As Low as 0.34 V at 1 mA  
• Pico Second Switching Speed  
• High Breakdown Voltage  
25.4 (1.00)  
MIN.  
Up to 70 V  
• Matched Characteristics  
Available  
1.93 (.076)  
1.73 (.068)  
The 5082-2300 Series and  
5082-2900 devices are unpas-  
sivated Schottky diodes in a glass  
package. These diodes have  
extremely low 1/f noise and are  
ideal for low noise mixing, and  
high sensitivity detecting. They  
are particularly well suited for use  
in Doppler or narrow band video  
receivers.  
Description/Applications  
The 1N5711, 1N5712, 5082-2800/  
10/11 are passivated Schottky  
barrier diodes which use a  
patented guard ring” design to  
achieve a high breakdown  
voltage. Packaged in a low cost  
glass package, they are well suited  
for high level detecting, mixing,  
switching, gating, log or A-D  
converting, video detecting,  
frequency discriminating,  
4.32 (.170)  
3.81 (.150)  
CATHODE  
25.4 (1.00)  
MIN.  
DIMENSIONS IN MILLIMETERS AND (INCHES).  
sampling, and wave shaping.  
Maximum Ratings  
Junction Operating and Storage Temperature Range  
5082-2303, -2900 .................................................................-60°C to +100°C  
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C  
5082-2835 ............................................................................-60°C to +150°C  
DC Power Dissipation  
(Measured in an infinite heat sink at TCASE = 25°C)  
Derate linearly to zero at maximum rated temperature  
5082-2303, -2900 .............................................................................. 100 mW  
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW  
5082-2835 ......................................................................................... 150 mW  
Peak Inverse Voltage ................................................................................. VBR  

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