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5082-2835 PDF预览

5082-2835

更新时间: 2024-02-10 08:21:16
品牌 Logo 应用领域
安捷伦 - AGILENT 微波混频二极管
页数 文件大小 规格书
6页 57K
描述
Schottky Barrier Diodes for General Purpose Applications

5082-2835 技术参数

生命周期:Contact Manufacturer包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.75
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:1 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.15 W
认证状态:Not Qualified表面贴装:NO
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

5082-2835 数据手册

 浏览型号5082-2835的Datasheet PDF文件第2页浏览型号5082-2835的Datasheet PDF文件第3页浏览型号5082-2835的Datasheet PDF文件第4页浏览型号5082-2835的Datasheet PDF文件第5页浏览型号5082-2835的Datasheet PDF文件第6页 
Schottky Barrier Diodes for  
General Purpose Applications  
Technical Data  
1N5711  
1N5712  
5082-2300 Series  
5082-2800 Series  
5082-2900  
Features  
• Low Turn-On Voltage  
The 5082-2835 is a passivated  
Schottky diode in a low cost glass  
package. It is optimized for low  
turn-on voltage. The 5082-2835 is  
particularly well suited for the  
UHF mixing needs of the CATV  
marketplace.  
Outline 15  
0.41 (.016)  
0.36 (.014)  
As Low as 0.34 V at 1 mA  
• Pico Second Switching Speed  
• High Breakdown Voltage  
25.4 (1.00)  
MIN.  
Up to 70 V  
• Matched Characteristics  
Available  
1.93 (.076)  
1.73 (.068)  
The 5082-2300 Series and  
5082-2900 devices are unpas-  
sivated Schottky diodes in a glass  
package. These diodes have  
extremely low 1/f noise and are  
ideal for low noise mixing, and  
high sensitivity detecting. They  
are particularly well suited for use  
in Doppler or narrow band video  
receivers.  
Description/Applications  
The 1N5711, 1N5712, 5082-2800/  
10/11 are passivated Schottky  
barrier diodes which use a  
patented guard ring” design to  
achieve a high breakdown  
voltage. Packaged in a low cost  
glass package, they are well suited  
for high level detecting, mixing,  
switching, gating, log or A-D  
converting, video detecting,  
frequency discriminating,  
4.32 (.170)  
3.81 (.150)  
CATHODE  
25.4 (1.00)  
MIN.  
DIMENSIONS IN MILLIMETERS AND (INCHES).  
sampling, and wave shaping.  
Maximum Ratings  
Junction Operating and Storage Temperature Range  
5082-2303, -2900 .................................................................-60°C to +100°C  
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C  
5082-2835 ............................................................................-60°C to +150°C  
DC Power Dissipation  
(Measured in an infinite heat sink at TCASE = 25°C)  
Derate linearly to zero at maximum rated temperature  
5082-2303, -2900 .............................................................................. 100 mW  
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW  
5082-2835 ......................................................................................... 150 mW  
Peak Inverse Voltage ................................................................................. VBR  

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