5秒后页面跳转
1N5712 PDF预览

1N5712

更新时间: 2024-02-13 03:21:24
品牌 Logo 应用领域
安捷伦 - AGILENT 整流二极管
页数 文件大小 规格书
6页 57K
描述
Schottky Barrier Diodes for General Purpose Applications

1N5712 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, LEADLESS, CERAMIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.36Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-CDSO-N3
JESD-609代码:e4元件数量:2
端子数量:3最大输出电流:0.075 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:GOLD OVER NICKEL
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5712 数据手册

 浏览型号1N5712的Datasheet PDF文件第2页浏览型号1N5712的Datasheet PDF文件第3页浏览型号1N5712的Datasheet PDF文件第4页浏览型号1N5712的Datasheet PDF文件第5页浏览型号1N5712的Datasheet PDF文件第6页 
Schottky Barrier Diodes for  
General Purpose Applications  
Technical Data  
1N5711  
1N5712  
5082-2300 Series  
5082-2800 Series  
5082-2900  
Features  
• Low Turn-On Voltage  
The 5082-2835 is a passivated  
Schottky diode in a low cost glass  
package. It is optimized for low  
turn-on voltage. The 5082-2835 is  
particularly well suited for the  
UHF mixing needs of the CATV  
marketplace.  
Outline 15  
0.41 (.016)  
0.36 (.014)  
As Low as 0.34 V at 1 mA  
• Pico Second Switching Speed  
• High Breakdown Voltage  
25.4 (1.00)  
MIN.  
Up to 70 V  
• Matched Characteristics  
Available  
1.93 (.076)  
1.73 (.068)  
The 5082-2300 Series and  
5082-2900 devices are unpas-  
sivated Schottky diodes in a glass  
package. These diodes have  
extremely low 1/f noise and are  
ideal for low noise mixing, and  
high sensitivity detecting. They  
are particularly well suited for use  
in Doppler or narrow band video  
receivers.  
Description/Applications  
The 1N5711, 1N5712, 5082-2800/  
10/11 are passivated Schottky  
barrier diodes which use a  
patented guard ring” design to  
achieve a high breakdown  
voltage. Packaged in a low cost  
glass package, they are well suited  
for high level detecting, mixing,  
switching, gating, log or A-D  
converting, video detecting,  
frequency discriminating,  
4.32 (.170)  
3.81 (.150)  
CATHODE  
25.4 (1.00)  
MIN.  
DIMENSIONS IN MILLIMETERS AND (INCHES).  
sampling, and wave shaping.  
Maximum Ratings  
Junction Operating and Storage Temperature Range  
5082-2303, -2900 .................................................................-60°C to +100°C  
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C  
5082-2835 ............................................................................-60°C to +150°C  
DC Power Dissipation  
(Measured in an infinite heat sink at TCASE = 25°C)  
Derate linearly to zero at maximum rated temperature  
5082-2303, -2900 .............................................................................. 100 mW  
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW  
5082-2835 ......................................................................................... 150 mW  
Peak Inverse Voltage ................................................................................. VBR  

与1N5712相关器件

型号 品牌 描述 获取价格 数据表
1N5712-1 CDI-DIODE SCHOTTKY BARRIER DIODES

获取价格

1N5712-1 MICROSEMI SCHOTTKY BARRIER DIODES

获取价格

1N5712-1/TR MICROSEMI Rectifier Diode,

获取价格

1N5712-1JANTX MICROSEMI Schottky Barrier Diode Qualified per MIL-PRF-19500/444

获取价格

1N5712UB MICROSEMI SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

获取价格

1N5712UBCA MICROSEMI SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

获取价格