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1GG5-8205 PDF预览

1GG5-8205

更新时间: 2024-02-14 04:01:27
品牌 Logo 应用领域
安捷伦 - AGILENT 限制器射频微波
页数 文件大小 规格书
7页 250K
描述
Limiter, 3000MHz Min, 13500MHz Max, 3 X 3 MM, ROHS COMPLIANT, QFN-16

1GG5-8205 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LCC16,.12SQ,20Reach Compliance Code:unknown
风险等级:5.8安装特点:SURFACE MOUNT
端子数量:16最高工作温度:70 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC16,.12SQ,20射频/微波设备类型:LIMITER
子类别:RF/Microwave Limiters表面贴装:YES
技术:GAASBase Number Matches:1

1GG5-8205 数据手册

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Agilent 1GG5-8205  
Packaged 13.5 GHz GaAs Diode Limiter  
TC626P  
Data Sheet  
Features  
• ESD Protection:  
3000V Human Body Model  
• Insertion Loss:  
1.0 dB Typ.  
• Port Match:  
S
and S –15 dB Typ.  
22  
11  
• Power Handling:  
25 dBm Typ.  
P
–1dB  
• Distortion:  
SHI >100 dBm Typ.  
THI +43 dBm Typ.  
TOI +43 dBm Typ.  
[1]  
Absolute Maximum Ratings  
Description  
The TC626P is a 13.5 GHz GaAs  
integrated diode limiter that can  
be used to protect sensitive RF  
circuits from excess RF power,  
DC transients, and ESD.  
Symbol  
Parameters/Conditions  
Min.  
Max.  
Units  
Pcont  
Icont  
Continuous Input Power  
Continuous DC Current  
33  
160  
7
dBm  
mA  
V
Vcont  
Continuous DC Voltage  
The circuit contains Planar–  
Doped–Barrier (PDB) diodes  
with integrated matching net-  
works and is fabricated with the  
MB6A integrated diode process.  
The barrier height of each diode  
element and the number of di-  
ode elements in each “stack” are  
optimized for low distortion  
T
Backside Temperature  
–55  
–65  
75  
°C  
A
T
Operating Channel Temperature  
Maximum Assembly Temperature[2]  
Storage Temperature  
150  
300  
165  
°C  
ch  
T
°C  
max  
T
°C  
stg  
Notes:  
1. Operation in excess of any one of these conditions may result in permanent damage to this  
device. TA = 25°C except for Top, Tst, and Tmax  
2. Sixty–second maximum.  
.
when P <15 dBm, while limit-  
in  
ing transmitted power when P  
>25 dBm.  
in  
1

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