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1517-20M PDF预览

1517-20M

更新时间: 2024-01-11 07:35:18
品牌 Logo 应用领域
ADPOW 晶体晶体管雷达
页数 文件大小 规格书
4页 89K
描述
20 Watts, 36 Volts, 200us, 10% Radar 1480 to 1650 MHz

1517-20M 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
其他特性:HIGH RELIABILITY最大集电极电流 (IC):3 A
集电极-发射极最大电压:65 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-CDFM-F2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

1517-20M 数据手册

 浏览型号1517-20M的Datasheet PDF文件第2页浏览型号1517-20M的Datasheet PDF文件第3页浏览型号1517-20M的Datasheet PDF文件第4页 
1517-20M  
20 Watts, 36 Volts, 200µs, 10%  
Radar 1480 to 1650 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55LV-1  
The 1517-20M is an internally matched, COMMON BASE transistor capable of  
providing 20 Watts of pulsed RF output power at 200 microseconds pulse width,  
10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-  
sealed transistor is specifically designed for upper L-Band radar applications. It  
utilizes gold metallization and diffused emitter ballasting to provide high  
reliability and supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation  
Device Dissipation @25°C1  
175 W  
Maximum Voltage and Current  
Collector to Base Voltage (BVCES  
)
70 V  
3 V  
Emitter to Base Voltage (BVEBO  
)
Collector Current (IC)  
3 A  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65 to +200 °C  
+200 °C  
FUNCTIONAL CHARACTERISTICS @ 25°C  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNITS  
Pout  
Pg  
Power Output  
F = 1480-1650 MHz  
Vcc = 36 Volts  
20  
7.6  
40  
9
25  
30  
W
dB  
%
Power Gain  
9.3  
Pin = 3.5 W  
Collector Efficiency  
Input Return Loss  
ηc  
IRL  
Pulse Width = 200µs  
Duty Factor = 10%  
dB  
dB  
Pd  
VSWR1  
Pulse Droop  
0.5  
Load Mismatch Tolerance  
F=1480 MHz, Pin = 3.5W  
3.0:1  
ELECTRICAL CHARACTERISTICS @ 25°C  
IEBO  
BVCES  
hFE  
θjc1  
Emitter cut-off current  
VEB = 3 V  
3
1
mA  
V
Collector to Emitter Breakdown IC = 15 mA  
65  
20  
DC – Current Gain  
Thermal Resistance  
VCE = 5V, Ic = 500 mA  
°C/W  
NOTES: 1. Pulse condition of 200µsec, 10%  
Issue Jan 2006  
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION  
PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.  
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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