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HMC1119LP4ME PDF预览

HMC1119LP4ME

更新时间: 2024-01-18 13:22:03
品牌 Logo 应用领域
亚德诺 - ADI 电信电信集成电路
页数 文件大小 规格书
16页 1030K
描述
0.25 dB LSB, 7-Bit, Silicon Digital Attenuator, 0.1 GHz to 6.0 GHz

HMC1119LP4ME 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:HVQCCN,
针数:24Reach Compliance Code:compliant
风险等级:2.18JESD-30 代码:S-XQCC-N16
JESD-609代码:e4长度:4 mm
湿度敏感等级:3功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装代码:HVQCCN封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:1 mm标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:TELECOM CIRCUIT
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4 mmBase Number Matches:1

HMC1119LP4ME 数据手册

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0.25 dB LSB, 7-Bit, Silicon Digital  
Attenuator, 0.1 GHz to 6.0 GHz  
Data Sheet  
HMC1119  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Attenuation range: 0.25 dB LSB steps to 31.75 dB  
Low insertion loss:  
24  
23  
22  
21  
20  
19  
1.1 dB at 1.0 GHz  
1.3 dB at 2.0 GHz  
Typical step error: less than 0.1 dB  
Excellent attenuation accuracy: less than 0.2 dB  
Low phase shift error: 6° phase shift at 1.0 GHz  
Safe state transitions  
D0  
1
2
3
4
5
6
18 SERNIN  
17 CLK  
V
DD  
P/S  
SERIAL/  
PARALLEL  
CONTROL  
16  
15  
14  
13  
LE  
GND  
GND  
7-BIT  
DIGITAL  
High linearity  
ATTNIN  
GND  
ATTNOUT  
GND  
ATTENUATOR  
1 dB compression (P1dB): 31 dBm typical  
Input third-order intercept (IP3): 54 dBm typical  
RF settling time (0.05 dB final RF output): 250 ns  
Single supply operation: 3.3 V to 5.0 V  
ESD rating: Class 2 (2 kV human body model (HBM))  
24-lead, 4 mm × 4 mm LFCSP package: 16 mm2  
7
8
9
10  
11  
12  
PACKAGE  
BASE  
GND  
Figure 1.  
APPLICATIONS  
Cellular infrastructure  
Microwave radios and very small aperture terminals (VSATs)  
Test equipment and sensors  
IF and RF designs  
GENERAL DESCRIPTION  
The HMC1119 is a broadband, highly accurate, 7-bit digital  
attenuator, operating from 0.1 GHz to 6.0 GHz with 31.5 dB  
attenuation control range in 0.25 dB steps.  
The HMC1119 has an on-chip regulator that can support a wide  
supply operating range from 3.3 V to 5.0 V with no performance  
change in electrical characteristics. The HMC1119 incorporates a  
driver that supports serial (3-wire) and parallel controls of the  
attenuator.  
The HMC1119 is implemented in a silicon process, offering  
very fast settling time, low power consumption, and high ESD  
robustness. The device features safe state transitions and is  
optimized for excellent step accuracy and high linearity over  
frequency and temperature range. The RF input and output are  
internally matched to 50 Ω and do not require any external  
matching components. The design is bidirectional; therefore,  
the RF input and output are interchangeable.  
The HMC1119 comes in a RoHS-compliant, compact, 4 mm ×  
4 mm LFCSP package.  
A fully populated evaluation board is available.  
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2016–2017 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 

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