Datasheet > 9926A

9926A

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	1455K
描述
SOP-8

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9926A 数据手册

9926A

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 Low on-resistance:V_DS=20V,I_D=5A,R_DS(ON)≤50mΩ@V_GS=4.5V

 Low gate charge and a wide gate drive range

 For parallel or bidirectional switch applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

Unit

VDS

V_GS

±8

T_A= 25°C

T_A= 70°C

4.2

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

Power dissipation

1.28

110

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)DSS*

Min

Typ

Max

Unit

μA V_DS=16V,

Conditions

VGS=0V, ID=250μA

VGS=0V

V^GS=±8V

VDS=VGS, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

±100

I_DSS

I_GSS

V_DS=0V,

V_GS(th)

0.4

0.6

On-State Drain Current

I_D(ON)

V_DS=5V,

VGS=10V

=4.5V, I =5A,

mΩ

VGS=4.5V, ID=5A, TJ=125°C

Drain-source on-resistance

R_DS(ON)*

=2.5V, I =4A

=1.8V, I =2A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

VDS=5V, ID=5A

IS=1A, VGS=0V

0.76

436

V_{DS=10V, VGS=0V, f=1MHz}

V_{DS=0V, V =0V, f=1MHz}

5.54

1.26

0.52

6.2

13.7

3.8

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_g

VGS=4.5V,VDS=10V,ID=5A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=5V, VDS=10V,

RGEN=6Ω,RL=2Ω

t_rr

Q_rr

I =5A, dI/dt=100A/μ s

nC IF=5A, dI/dt=100A/μ s

*Pulse test ; Pulse width =80µs, Duty cycle ≤0.5% .

SHENZHEN HOTTECH ELECTRONICS CO.,LTD

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E-mail:hkt@heketai.com

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