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93LC76A-TE/OT PDF预览

93LC76A-TE/OT

更新时间: 2024-11-12 13:05:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 89K
描述
1K X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6, LEAD FREE, PLASTIC, SC-74A, SOT-23, 6 PIN

93LC76A-TE/OT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP5/6,.11,37针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.32
最大时钟频率 (fCLK):3 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2.95 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:6
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.45 mm
串行总线类型:MICROWIRE最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:1.63 mm
最长写入周期时间 (tWC):5 ms写保护:SOFTWARE
Base Number Matches:1

93LC76A-TE/OT 数据手册

 浏览型号93LC76A-TE/OT的Datasheet PDF文件第2页浏览型号93LC76A-TE/OT的Datasheet PDF文件第3页浏览型号93LC76A-TE/OT的Datasheet PDF文件第4页浏览型号93LC76A-TE/OT的Datasheet PDF文件第5页浏览型号93LC76A-TE/OT的Datasheet PDF文件第6页浏览型号93LC76A-TE/OT的Datasheet PDF文件第7页 
93LC76/86  
8K/16K 2.5V Microwire Serial EEPROM  
PACKAGE TYPES  
DIP Package  
FEATURES  
• Single supply with programming operation down  
to 2.5V  
• Low power CMOS technology  
- 1 mA active current typical  
8
1
V
CC  
CS  
- 5 µA standby current (typical) at 3.0V  
7
6
5
2
3
4
PE  
CLK  
DI  
• ORG pin selectable memory configuration  
1024 x 8 or 512 x 16 bit organization (93LC76)  
2048 x 8 or 1024 x 16 bit organization (93LC86)  
ORG  
DO  
V
SS  
• Self-timed ERASE and WRITE cycles  
(including auto-erase)  
SOIC Package  
• Automatic ERAL before WRAL  
• Power on/off data protection circuitry  
• Industry standard 3-wire serial I/O  
• Device status signal during ERASE/WRITE cycles  
• Sequential READ function  
8
1
CS  
CLK  
DI  
V
CC  
PE  
ORG  
7
6
5
2
3
4
V
DO  
SS  
• 10,000,000 ERASE/WRITE cycles guaranteed  
• Data retention > 200 years  
• 8-pin PDIP/SOIC package  
BLOCK DIAGRAM  
Temperature ranges available  
- Commercial (C)  
- Industrial (I)  
0°C to +70°C  
-40°C to +85°C  
VCC VSS  
DESCRIPTION  
Address  
Decoder  
Memory  
Array  
The Microchip Technology Inc. 93LC76/86 are 8K and  
16K low voltage serial Electrically Erasable PROMs.  
The device memory is configured as x8 or x16 bits  
depending on the ORG pin setup. Advanced CMOS  
technology makes these devices ideal for low power  
non-volatile memory applications. These devices also  
have a Program Enable (PE) pin to allow the user to  
write protect the entire contents of the memory array.  
The 93LC76/86 is available in standard 8-pin DIP and  
8-pin surface mount SOIC packages.  
Address  
Counter  
Data  
Register  
Output  
Buffer  
DO  
DI  
Mode  
Decode  
PE  
Logic  
CS  
Clock  
CLK  
Generator  
Microwire is a registered trademark of National Semiconductor Incorporated.  
1996 Microchip Technology Inc.  
Preliminary  
DS21131C-page 1  
This document was created with FrameMaker 4 0 4  

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