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93LC66BT-I/SM PDF预览

93LC66BT-I/SM

更新时间: 2024-02-10 08:44:56
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
12页 102K
描述
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.208 INCH, PLASTIC, SOIC-8

93LC66BT-I/SM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:0.208 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.4
其他特性:1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:5.28 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:2.03 mm串行总线类型:MICROWIRE
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.0015 mA最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:5.2 mm最长写入周期时间 (tWC):6 ms
写保护:SOFTWAREBase Number Matches:1

93LC66BT-I/SM 数据手册

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M
93LC66A/B  
4K 2.5V Microwire Serial EEPROM  
FEATURES  
BLOCK DIAGRAM  
• Single supply with operation down to 2.5V  
• Low power CMOS technology  
- 1 mA active current (typical)  
ADDRESS  
DECODER  
MEMORY  
ARRAY  
- 1 µA standby current (maximum)  
• 512 x 8 bit organization (93LC66A)  
• 256 x 16 bit organization (93LC66B)  
• Self-timed ERASE and WRITE cycles  
(including auto-erase)  
ADDRESS  
COUNTER  
DATA  
REGISTER  
OUTPUT  
BUFFER  
DO  
• Automatic ERAL before WRAL  
DI  
• Power on/off data protection circuitry  
• Industry standard 3-wire serial interface  
• Device status signal during ERASE/WRITE cycles  
• Sequential READ function  
MODE  
DECODE  
LOGIC  
CS  
• 1,000,000 E/W cycles guaranteed  
• Data retention > 200 years  
Vcc  
Vss  
CLOCK  
GENERATOR  
CLK  
• 8-pin PDIP/SOIC and 8-pin TSSOP packages  
• Available for the following temperature ranges:  
DESCRIPTION  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40°C to +85°C  
The Microchip Technology Inc. 93LC66A/B are 4K-bit,  
low voltage serial Electrically Erasable PROMs. The  
device memory is configured as x8 (93LC66A) or  
x16 bits (93LC66B). Advanced CMOS technology  
makes these devices ideal for low power nonvolatile  
memory applications. The 93LC66A/B is available in  
standard 8-pin DIP, surface mount SOIC, and TSSOP  
packages.The 93LC66AX/BX are only offered in a 150-  
mil SOIC package.  
PACKAGE TYPE  
DIP  
SOIC  
SOIC  
TSSOP  
1
2
3
4
8
7
6
5
CS  
CS  
CLK  
DI  
1
2
8
7
Vcc  
NC  
Vcc  
NC  
NC  
Vss  
1
8
7
1
2
8
7
NU  
Vcc  
CS  
NC  
Vss  
DO  
DI  
VCC  
NC  
CS  
CLK  
DI  
2
DO  
CLK  
3
4
6
5
NC  
3
6
5
3
4
6
5
DI  
NC  
Vss  
DO  
4
CLK  
DO  
Vss  
Microwire is a registered trademark of Motorola.  
1997 Microchip Technology Inc.  
Preliminary  
DS21209A-page 1  

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