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93LC66A-TE/MCG PDF预览

93LC66A-TE/MCG

更新时间: 2024-11-19 13:05:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
20页 246K
描述
512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8

93LC66A-TE/MCG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:HVSON, SOLCC8,.11,20针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.26
最大时钟频率 (fCLK):3 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
JESD-609代码:e3长度:3 mm
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:512 words字数代码:512
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:512X8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1 mm
串行总线类型:MICROWIRE最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.002 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
最长写入周期时间 (tWC):6 ms写保护:SOFTWARE
Base Number Matches:1

93LC66A-TE/MCG 数据手册

 浏览型号93LC66A-TE/MCG的Datasheet PDF文件第2页浏览型号93LC66A-TE/MCG的Datasheet PDF文件第3页浏览型号93LC66A-TE/MCG的Datasheet PDF文件第4页浏览型号93LC66A-TE/MCG的Datasheet PDF文件第5页浏览型号93LC66A-TE/MCG的Datasheet PDF文件第6页浏览型号93LC66A-TE/MCG的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 93LC46C, 93LC56C or 93LC66C.  
93LC46/56/66  
1K/2K/4K 2.5V Microwire Serial EEPROM  
Features:  
Package Types  
PDIP/SOIC  
• Single supply with programming operation down  
to 2.5V  
• Low-power CMOS technology  
CS  
CLK  
DI  
VCC  
NU  
1
2
3
4
8
7
6
5
• 100 µA typical active read current at 2.5V  
• 3 µA typical standby current at 2.5V  
ORG  
VSS  
• ORG pin selectable memory configuration  
• 128 x 8- or 64 x 16-bit organization (93LC46)  
• 256 x 8- or 128 x 16-bit organization (93LC56)  
• 512 x 8 or 256 x 16 bit organization (93LC66)  
DO  
ROTATED SOIC  
NU  
VCC  
CS  
ORG  
VSS  
DO  
DI  
1
2
3
4
8
7
6
5
• Self-timed erase and write cycles  
(including auto-erase)  
• Automatic ERAL before WRAL  
• Power on/off data protection circuitry  
• Industry standard 3-wire serial I/O  
• Device status signal during erase/write cycles  
• Sequential read function  
CLK  
Block Diagram  
• 1,000,000 E/W cycles ensured  
• Data retention > 200 years  
VCC  
VSS  
• 8-pin PDIP/SOIC  
(SOIC in JEDEC standards)  
Address  
Decoder  
Memory  
Array  
Temperature ranges supported:  
- Industrial (I):  
-40°C to +85°C  
Address  
Counter  
Description:  
DO  
Output  
Buffer  
Data Register  
The Microchip Technology Inc. 93LC46/56/66 are 1K,  
2K and 4K low voltage serial Electrically Erasable  
PROMs (EEPROM). The device memory is configured  
as x8 or x16 bits depending on the external logic of  
levels of the ORG pin. Advanced CMOS technology  
makes these devices ideal for low power nonvolatile  
memory applications. The 93LC Series is available in  
standard 8-pin PDIP and surface mount SOIC  
packages. The rotated pin-out 93LC46X/56X/66X are  
offered in the “SN” package only.  
DI  
Mode  
Decode  
Logic  
ORG  
CS  
Clock  
Register  
CLK  
2004 Microchip Technology Inc.  
DS21712B-page 1  

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