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93LC56BT/ST PDF预览

93LC56BT/ST

更新时间： 2024-11-13 13:01:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 102K
描述
128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, TSSOP-8

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中文翻译

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93LC56BT/ST 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：TSSOP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.14
其他特性：1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS最大时钟频率 (fCLK)：2 MHz
数据保留时间-最小值：200耐久性：1000000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.4 mm内存密度：2048 bit
内存集成电路类型：EEPROM内存宽度：16
湿度敏感等级：1功能数量：1
端子数量：8字数：128 words
字数代码：128工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：128X16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/5 V认证状态：Not Qualified
座面最大高度：1.1 mm串行总线类型：MICROWIRE
最大待机电流：0.000001 A子类别：EEPROMs
最大压摆率：0.0015 mA最大供电电压 (Vsup)：6 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：3 mm最长写入周期时间 (tWC)：6 ms
写保护：SOFTWAREBase Number Matches：1

93LC56BT/ST 数据手册

 浏览型号93LC56BT/ST的Datasheet PDF文件第2页浏览型号93LC56BT/ST的Datasheet PDF文件第3页浏览型号93LC56BT/ST的Datasheet PDF文件第4页浏览型号93LC56BT/ST的Datasheet PDF文件第5页浏览型号93LC56BT/ST的Datasheet PDF文件第6页浏览型号93LC56BT/ST的Datasheet PDF文件第7页 
AN560  
Using the 93LC56 and 93LC66  
3-Wire Byte Write Program  
INTRODUCTION  
– Delay Routine  
The Microchip Technology Inc. 93LC56/66 are low-  
power 3-wire non-volatile memories and are suitable for  
manyembeddedsystemcodeanddatastorageapplica-  
tions. Thesedevicesareeasilyinterfacedtomostmicro-  
controllers in today's market place, but Microchip’s 8-bit  
RISC series PIC16CXX offers the best code density of  
any microcontroller on the market today. Using the  
PIC16C54, the assembly programs contained in this  
application note have been fully tested and provide the  
correct timing and 3-wire sequences to fully operate the  
93LC56/66 in a PIC16CXX-based embedded applica-  
tion. The PIC16C54 was clocked at a 10MHz frequency.  
This application note is intended to provide the engineer  
with readily available stand-alone code modules to  
accomplishallofthenecessaryfunctionstoutilize these  
devices in a low power application using the efficient  
PIC16C54 microcontroller.  
– Start Bit Routine  
– Bit Out Routine  
– Transmit Data Routine  
– Power-up Routine  
– Erase/Write Enable Routine (EWEN)  
– Byte Write Routine  
– Erase/Write Disable Routine (EWDS)  
3-Wire Byte Write with Data Polling Program  
– Data Polling Delay Routine  
– Start Bit Routine  
– Bit Out Routine  
The 93 series of devices have essentially four I/O pins:  
– Transmit Data Routine  
– Power-up Routine  
CS  
CLK  
DI  
Chip Select  
Clock  
– Erase/Write Enable Routine  
– Write Routine  
Data In  
DO  
Data Out  
– Erase/Write Disable Routine (EWDS)  
This series of devices use a series of commands to  
accomplish the normal memory functions. These are  
READ, WRITE, EWEN, ERASE, ERAL, WRAL, EWDS.  
For a more detailed discussion of the function of these  
devicesreferencetheappropriatedatasheetandAN536,  
also published by Microchip Technology.  
3-Wire Sequential Read Program  
– Delay Routine  
– Start Bit Routine  
– Bit In Routine  
– Receive Data Routine  
– Bit Out Routine  
– Transmit Data Routine  
– Power-up Routine  
– Read Routine  
The following programs are included in this application  
note and are fully functional stand-alone modules. They  
are intended for use by those who are not already  
familiar with interfacing a PIC16CXX microcontroller to  
a 93 series device. For those with more experience,  
please refer to application note AN530.  
8
3-Wire Byte Read Program  
– Start Bit Routine  
– Receive Data Routine  
– Bit Out Routine  
Author:  
Bruce Negley  
Memory Products Division  
– Transmit Data Routine  
– Power-up Routine  
– Read Routine  
© 1994 Microchip Technology Inc.  
DS00560D-page 1  
8-99  
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