是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DFN |
包装说明: | DFN-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | Factory Lead Time: | 6 weeks |
风险等级: | 0.96 | Is Samacsys: | N |
最大时钟频率 (fCLK): | 2 MHz | 数据保留时间-最小值: | 200 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-N8 |
JESD-609代码: | e3 | 长度: | 3 mm |
内存密度: | 2048 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 16 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 128 words | 字数代码: | 128 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128X16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC8,.11,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 并行/串行: | SERIAL |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
串行总线类型: | MICROWIRE | 最大待机电流: | 0.000001 A |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 2.5 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | DUAL |
宽度: | 2 mm | 写保护: | SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
93LC56B-I/MS | MICROCHIP |
类似代替 |
2K Microwire Compatible Serial EEPROM | |
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93LC56BT-I/MCG | MICROCHIP |
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