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93AA66/SN PDF预览

93AA66/SN

更新时间: 2024-11-23 03:04:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
22页 359K
描述
1K/2K/4K 1.8V Microwire Serial EEPROM

93AA66/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:7.43
其他特性:100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS备用内存宽度:8
最大时钟频率 (fCLK):2 MHz数据保留时间-最小值:200
耐久性:10000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大待机电流:0.00003 A子类别:EEPROMs
最大压摆率:0.001 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

93AA66/SN 数据手册

 浏览型号93AA66/SN的Datasheet PDF文件第2页浏览型号93AA66/SN的Datasheet PDF文件第3页浏览型号93AA66/SN的Datasheet PDF文件第4页浏览型号93AA66/SN的Datasheet PDF文件第5页浏览型号93AA66/SN的Datasheet PDF文件第6页浏览型号93AA66/SN的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 93AA46C, 93AA56C or  
93AA66C.  
93AA46/56/66  
1K/2K/4K 1.8V Microwire Serial EEPROM  
Features:  
Package Types  
• Single supply with programming operation down  
to 1.8V  
PDIP  
CS  
CLK  
DI  
1
2
3
4
8
7
6
5
VCC  
NU  
• Low-power CMOS technology:  
- 70 µA typical active read current at 1.8V  
- 2 µA typical standby current at 1.8V  
• ORG pin selectable memory configuration:  
- 128 x 8- or 64 x 16-bit organization (93AA46)  
ORG  
VSS  
DO  
- 256 x 8- or 128 x 16-bit organization  
(93AA56)  
SOIC  
- 512 x 8 or 256 x 16-bit organization (93AA66)  
1
2
3
4
8
7
6
5
VCC  
NU  
• Self-timed erase and write cycles  
(including auto-erase)  
CS  
CLK  
• Automatic ERAL before WRAL  
• Power on/off data protection circuitry  
• Industry standard 3-wire serial I/O  
• Device status signal during erase/write cycles  
• Sequential read function  
ORG  
VSS  
DI  
DO  
SOIC  
• 1,000,000 E/W cycles ensured  
• Data retention > 200 years  
1
2
3
4
8
7
6
5
ORG  
Vss  
DO  
DI  
NU  
Vcc  
CS  
• 8-pin PDIP/SOIC  
(SOIC in JEDEC and EIAJ standards)  
Temperature ranges supported:  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40°C to +85°C  
CLK  
Description:  
The Microchip Technology Inc. 93AA46/56/66 are 1K,  
2K and 4K low voltage serial Electrically Erasable  
PROMs. The device memory is configured as x8 or x16  
bits depending on the ORG pin setup. Advanced  
CMOS technology makes these devices ideal for low  
power nonvolatile memory applications. The 93AA  
Series is available in standard 8-pin PDIP and surface  
mount SOIC packages. The rotated pin-out 93AA46X/  
56X/66X are offered in the “SN” package only.  
Block Diagram  
VCC VSS  
Address  
Decoder  
Memory  
Array  
Address  
Counter  
Data  
Register  
Output  
Buffer  
DO  
DI  
Mode  
Decode  
Logic  
ORG  
CS  
Clock  
Generator  
CLK  
2004 Microchip Technology Inc.  
DS20067J-page 1  

93AA66/SN 替代型号

型号 品牌 替代类型 描述 数据表
93AA66T/SN MICROCHIP

完全替代

1K/2K/4K 1.8V Microwire Serial EEPROM
93AA66XT/SN MICROCHIP

完全替代

1K/2K/4K 1.8V Microwire Serial EEPROM

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