是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | LSSOP, TSOP5/6,.11,37 | 针数: | 6 |
Reach Compliance Code: | compliant | 风险等级: | 1.17 |
最大时钟频率 (fCLK): | 3 MHz | 数据保留时间-最小值: | 200 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 长度: | 2.95 mm |
内存密度: | 4096 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 16 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 6 |
字数: | 256 words | 字数代码: | 256 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256X16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LSSOP |
封装等效代码: | TSOP5/6,.11,37 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 260 | 电源: | 2/5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.45 mm |
串行总线类型: | MICROWIRE | 最大待机电流: | 0.000001 A |
子类别: | EEPROMs | 最大压摆率: | 0.002 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 1.8 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.95 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 1.63 mm |
最长写入周期时间 (tWC): | 6 ms | 写保护: | SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
93LC66BT-I/OT | MICROCHIP |
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