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93AA46B-TI/MC PDF预览

93AA46B-TI/MC

更新时间: 2024-11-09 13:05:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 98K
描述
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8

93AA46B-TI/MC 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SON
包装说明:HVSON, SOLCC8,.11,20针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.09
Is Samacsys:N最大时钟频率 (fCLK):3 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8JESD-609代码:e3
长度:3 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:16
湿度敏感等级:1功能数量:1
端子数量:8字数:64 words
字数代码:64工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64X16封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:MICROWIRE
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.002 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:2 mm最长写入周期时间 (tWC):6 ms
写保护:SOFTWAREBase Number Matches:1

93AA46B-TI/MC 数据手册

 浏览型号93AA46B-TI/MC的Datasheet PDF文件第2页浏览型号93AA46B-TI/MC的Datasheet PDF文件第3页浏览型号93AA46B-TI/MC的Datasheet PDF文件第4页浏览型号93AA46B-TI/MC的Datasheet PDF文件第5页浏览型号93AA46B-TI/MC的Datasheet PDF文件第6页浏览型号93AA46B-TI/MC的Datasheet PDF文件第7页 
93AA46/56/66  
1K/2K/4K 1.8V Microwire Serial EEPROM  
FEATURES  
PACKAGE TYPES  
DIP  
• Single supply with programming operation down  
to 1.8V  
CS  
CLK  
DI  
1
2
3
4
8
7
6
5
VCC  
NU  
• Low power CMOS technology  
- 70 µA typical active READ current at 1.8V  
- 2 µA typical standby current at 1.8V  
• ORG pin selectable memory configuration  
- 128 x 8- or 64 x 16-bit organization (93AA46)  
ORG  
VSS  
DO  
- 256 x 8- or 128 x 16-bit organization  
(93AA56)  
SOIC  
- 512 x 8 or 256 x 16 bit organization (93AA66)  
1
2
3
4
8
7
6
5
VCC  
NU  
CS  
• Self-timed ERASE and WRITE cycles  
(including auto-erase)  
CLK  
• Automatic ERAL before WRAL  
• Power on/off data protection circuitry  
• Industry standard 3-wire serial I/O  
• Device status signal during ERASE/WRITE cycles  
• Sequential READ function  
ORG  
VSS  
DI  
DO  
SOIC  
• 10,000,000 ERASE/WRITE cycles guaranteed on  
93AA56 and 93AA66  
1
2
3
4
8
7
6
5
ORG  
Vss  
DO  
DI  
NU  
Vcc  
CS  
• 1,000,000 E/W cycles guaranteed on 93AA46  
• Data retention > 200 years  
• 8-pin PDIP/SOIC  
(SOIC in JEDEC and EIAJ standards)  
Temperature ranges supported  
CLK  
- Commercial (C):  
0°C to +70°C  
DESCRIPTION  
BLOCK DIAGRAM  
The Microchip Technology Inc. 93AA46/56/66 are 1K,  
2K and 4K low voltage serial Electrically Erasable  
PROMs. The device memory is configured as x8 or x16  
bits depending on the ORG pin setup. Advanced  
CMOS technology makes these devices ideal for low  
power non-volatile memory applications. The 93AA  
Series is available in standard 8-pin DIP and surface  
mount SOIC packages. The rotated pin-out 93AA46X/  
56X/66X are offered in the “SN” package only.  
VCC  
VSS  
ADDRESS  
DECODER  
MEMORY  
ARRAY  
ADDRESS  
COUNTER  
OUTPUT  
BUFFER  
DATA REGISTER  
DO  
DI  
MODE  
DECODE  
LOGIC  
ORG  
CS  
CLOCK  
GENERATOR  
CLK  
Microwire is a registered trademark of National Semiconductor Incorporated.  
1996 Microchip Technology Inc.  
DS20067G-page 1  
This document was created with FrameMaker 4 0 4  

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