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935313345528

更新时间： 2024-09-26 20:49:43
品牌 Logo 应用领域
恩智浦 - NXP 高功率电源射频微波
页数 文件大小 规格书
22页 424K
描述
Narrow Band High Power Amplifier

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935313345528 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.61射频/微波设备类型：NARROW BAND HIGH POWER
Base Number Matches：1

935313345528 数据手册

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Document Number: A2I20H080N  
Rev. 0, 3/2016  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
A2I20H080NR1  
A2I20H080GNR1  
The A2I20H080N wideband integrated circuit is an asymmetrical Doherty  
designed with on--chip matching that makes it usable from 1800 to 2200 MHz.  
This multi--stage structure is rated for 26 to 32 V operation and covers all typical  
cellular base station modulation formats.  
1800–2200 MHz, 13.5 W AVG., 30 V  
AIRFAST RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
1800 MHz  
Typical Doherty Single--Carrier W--CDMA Characterization Performance:  
VDD = 30 Vdc, IDQ1A = 30 mA, IDQ2A = 195 mA, VGS1B = 1.35 Vdc,  
VGS2B = 1.25 Vdc, Pout = 13.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%  
Probability on CCDF.(1)  
G
PAE  
(%)  
ACPR  
(dBc)  
ps  
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
28.4  
28.2  
27.9  
TO--270WB--15  
PLASTIC  
A2I20H080NR1  
42.1  
43.4  
42.9  
–36.9  
–38.6  
–34.0  
1. All data measured in fixture with device soldered to heatsink.  
Features  
TO--270WBG--15  
PLASTIC  
A2I20H080GNR1  
Advanced High Performance In--Package Doherty  
On--Chip Matching (50 Ohm Input, DC Blocked)  
Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function (2)  
Designed for Digital Predistortion Error Correction Systems  
V
DS1A  
V
V
1
2
DS1A  
GS2A  
Carrier  
RF  
RF /V  
out1 DS2A  
inA  
15  
V
3
GS1A  
RF  
4
RF /V  
out1 DS2A  
inA  
N.C.  
5
GND  
GND  
N.C.  
6
V
V
GS1A  
GS2A  
Quiescent Current  
Temperature Compensation  
14  
13  
GND  
7
(2)  
(2)  
8
9
10  
11  
12  
RF  
inB  
V
V
GS1B  
GS2B  
RF /V  
out2 DS2B  
Quiescent Current  
Temperature Compensation  
V
GS1B  
GS2B  
Peaking  
V
V
DS1B  
(Top View)  
RF  
inB  
RF /V  
out2 DS2B  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
V
DS1B  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current  
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.  
Freescale Semiconductor, Inc., 2016. All rights reserved.  
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