Datasheet > 935311886515

935311886515

更新时间： 2023-12-18 00:00:00

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恩智浦 - NXP		/
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17页	735K
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RF Power Field-Effect Transistor

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935311886515 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

935311886515 数据手册

Document Number: MHT1006N

Rev. 1, 12/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

RF power transistor suitable for industrial heating applications from 728 to

2700 MHz. Device is capable of both CW and pulse operation.

MHT1006NT1

2300 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc, I_DQ= 90 mA,

_out= 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on

CCDF.⁽¹⁾

728–2700 MHz, 10 W CW, 28 V

INDUSTRIAL HEATING, RUGGED

RF POWER LDMOS TRANSISTOR



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

(dB)

21.2

21.6

20.7

(%)

23.6

22.6

21.0

2300 MHz

2350 MHz

2400 MHz

9.0

8.6

8.3

–40.9

–40.0

–40.1

–10

–22

–9

Features



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

PLD--1.5W

PLASTIC



Designed for Digital Predistortion Error Correction Systems

Universal Broadband Driven Device with Internal RF Feedback

RF /V

in GS

RF /V

out DS

(Top View)

Note: The center pad on the backside of the

package is the source terminal for the

transistor.

Figure 1. Pin Connections

1. All data measured in fixture with device soldered to heatsink.

MHT1006NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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