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934059881215 PDF预览

934059881215

更新时间: 2024-11-11 20:10:51
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
13页 125K
描述
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4

934059881215 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.8
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:CURRENT MIRROR
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

934059881215 数据手册

 浏览型号934059881215的Datasheet PDF文件第2页浏览型号934059881215的Datasheet PDF文件第3页浏览型号934059881215的Datasheet PDF文件第4页浏览型号934059881215的Datasheet PDF文件第5页浏览型号934059881215的Datasheet PDF文件第6页浏览型号934059881215的Datasheet PDF文件第7页 
BCM61B  
NPN/NPN matched double transistor  
Rev. 02 — 28 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device (SMD)  
plastic package. Matched version of BCV61.  
PNP/PNP equivalent: BCM62B  
1.2 Features  
I Current gain matching  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor TR1  
VCEO  
hFE  
collector-emitter voltage  
DC current gain  
open base  
-
-
45  
V
VCE = 5 V;  
IC = 2 mA  
200  
290  
450  
Per transistor  
IC  
collector current  
-
-
100  
mA  
Per device  
IC1/IE2  
[1]  
current matching  
VCE1 = 5 V;  
0.92  
1.02  
1.12  
IE2 = 0.5 mA;  
Tamb 25 °C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  

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