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934055156412 PDF预览

934055156412

更新时间: 2024-09-24 04:25:27
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 38K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 1A I(T)RMS, TO-92, PLASTIC, SPT, SC-43, 3 PIN

934055156412 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT131 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated, sensitive gate triacs in a  
plastic envelope, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
general  
purpose  
bidirectional  
BT131-  
500  
600  
800  
switching and phase control  
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
VDRM  
Repetitive peak off-state  
voltages  
500  
1
600  
1
800  
1
V
A
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
16  
16  
A
PINNING - TO92  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 2  
T2  
T1  
2
gate  
3
main terminal 1  
G
3
2 1  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tlead 51 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
1
A
t = 20 ms  
-
-
-
16  
17.6  
1.28  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 1.5 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
December 2000  
1
Rev 2.000  

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