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933946340215 PDF预览

933946340215

更新时间: 2024-09-24 19:50:43
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
4页 23K
描述
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal

933946340215 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):0.15 A
最大漏源导通电阻:6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

933946340215 数据手册

 浏览型号933946340215的Datasheet PDF文件第2页浏览型号933946340215的Datasheet PDF文件第3页浏览型号933946340215的Datasheet PDF文件第4页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
Logic level FET  
BSS123  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Extremely fast switching  
• Logic level compatible  
• Subminiature surface mounting  
package  
VDSS = 100 V  
ID = 150 mA  
g
RDS(ON) 6 (VGS = 10 V)  
s
GENERAL DESCRIPTION  
PINNING  
SOT23  
N-channel enhancement mode  
field-effect transistor in a plastic  
PIN  
DESCRIPTION  
3
envelope  
using  
trench’  
1
2
3
gate  
technology.  
Top view  
source  
drain  
Applications:-  
• Relay driver  
• High-speed line driver  
• Telephone ringer  
1
2
The BSS123 is supplied in the  
SOT23 subminiature surface  
mounting package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
IDM  
PD  
Drain-source voltage  
Drain-gate voltage  
Tj = 25 ˚C to 150˚C  
Tj = 25 ˚C to 150˚C; RGS = 20 k  
-
-
-
-
-
-
100  
100  
± 20  
150  
600  
0.25  
150  
V
V
V
mA  
mA  
W
Gate-source voltage  
Continuous drain current  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
Ta = 25 ˚C  
Ta = 25 ˚C  
Ta = 25 ˚C  
Tj, Tstg  
- 55  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-a  
Thermal resistance junction surface mounted on FR4 board  
to ambient  
500  
-
K/W  
August 2000  
1
Rev 1.000  

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