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933440830127

更新时间: 2024-11-21 20:10:59
品牌 Logo 应用领域
恩智浦 - NXP 局域网三端双向交流开关
页数 文件大小 规格书
6页 33K
描述
600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, PLASTIC, SC-46, 3 PIN

933440830127 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.17外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

933440830127 数据手册

 浏览型号933440830127的Datasheet PDF文件第2页浏览型号933440830127的Datasheet PDF文件第3页浏览型号933440830127的Datasheet PDF文件第4页浏览型号933440830127的Datasheet PDF文件第5页浏览型号933440830127的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
BT136 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated triacs in a plastic envelope,  
intended for use in applications requiring  
high bidirectional transient and blocking  
voltagecapability andhigh thermal cycling  
performance. Typical applications include  
motor control, industrial and domestic  
lighting, heating and static switching.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
BT136-  
BT136-  
600  
600F  
VDRM  
Repetitive peak off-state  
voltages  
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
4
25  
A
A
Non-repetitive peak on-state  
current  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
tab  
T2  
T1  
G
2
main terminal 2  
gate  
3
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
6001  
4
UNIT  
V
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
June 2001  
1
Rev 1.400  

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