Datasheet > 9120GJ

9120GJ

更新时间： 2024-11-19 01:19:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	68K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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9120GJ 数据手册

AP9120GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower On-resistance

BV_DSS

R_DS(ON)

I_D

-200V

680mΩ

-8A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP9120 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited

for high current application due to the low connection resistance. The

through-hole version (AP9120GJ) are available for low-profile

applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-200

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-8

-5

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.77

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

1.3

62.5

110

Rthj-a

Data and specifications subject to change without notice

201501273

12 3 4 5

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