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910PTCO

更新时间: 2022-02-26 13:38:08
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尼尔 - NELLSEMI /
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描述
Phase Control Thyristors

910PTCO 数据手册

 浏览型号910PTCO的Datasheet PDF文件第2页 
RoHS  
RoHS  
910PT Series  
SEMICONDUCTOR  
Phase Control Thyristors  
Features  
1. 910PT series Thyristors are designed  
for various power controls  
C TYPE  
2. Voltage rating up to 2600V  
3. Typical application  
DC motor control  
20  
Controlled DC power supplies  
AC controllers  
Ordering code  
910  
(1)  
PT  
(2)  
XX  
(3)  
C
(4)  
0
(5)  
3.5( 0.14 )  
DIA.  
34.0( 1.34 ) DIA. Max.  
(1) Maximum average on-state current , A  
(2) For Phase Control Thyristor  
(3) Voltage code , code x 100 = V  
(4) package style : A , B , C , D ,E for Disc Type  
/ V  
RRM  
DRM  
27.0( 1.06 )  
Max.  
(5) Terminal types  
E0le- cfotr reiycelaetl Characteristics  
All dimensions in millimeters ( inches )  
Value  
Symbol  
Parameter  
Condition  
Unit  
Type  
Min.  
2000  
Max.  
910  
180 half sine wave , 50Hz  
I
Mean on-state current  
A
A
V
A
T(AV)  
Double side cooled , T = 55 C  
c
Double side cooled , T =55 C  
I
Max. RMS on-state current  
1788  
2600  
T(RMS)  
hs  
V
V
V
V
& V  
& V  
t =10ms  
p
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
RRM  
DRM  
DRM  
DsM  
RRM  
= V  
& V + 100V  
RRM  
RsM  
DRM  
I
Surge on-state current  
For fusing coordination  
Threshold voltage  
9200  
1591  
1.11  
0.28  
1.62  
600  
TSM  
10 ms half sine wave  
= 0.6V  
I2  
KA2s  
V
R
RRM  
t
V
V
T(TO)  
r
t
On-state slope resistance  
Max. Forward voltage drop  
Holding current  
mΩ  
V
V
I
=2000A , F=14.1KN  
TM  
TM  
V =12V , I =1A  
I
mA  
A/µs  
H
A
A
d
Cirtical rate of rise of turned-on current Gate drive 20V , 20 Ω, t 0.5 µs  
600  
i/dt  
r
I
=400A , d  
iRR/dt  
=0.67 V  
DM DRM  
=30V/µs  
TM  
v/dt  
=-10 A/µs  
t
µs  
V/µs  
mA  
Typical turn-off time  
150  
1000  
80  
q
d
d
Cirtical rate of rise of off-state voltage  
Repetitive peak reverse current  
V
200  
v/dt  
I
V
V
= V  
= V  
RRM  
R
D
RRM  
DRM  
I
DRM  
P
Max. average gate power  
2
W
W
G
Square wavepulse width 100 µs  
P
Max. peak gate power square  
10  
GM  
I
Gate trigger current  
200  
3.0  
mA  
100  
1.1  
GT  
V =12V , I =1A  
A
A
V
Gate trigger voltage  
V
V
A
V
V
GT  
At 67% V  
, T =T  
j j max.  
V
DC voltage not to trigger  
Max. peak positive gate current  
Max. peak positive gate voltage  
0.25  
DRM  
GD  
I
4
16  
5
FGM  
V
T =T  
j
. t 3s  
p
FGM  
j max  
V
Max. peak negative gate voltage  
Storage temperature  
RGM  
T
- 40  
- 40  
140  
125  
C
C
stg  
T
j
Max.operating temperaturerange  
R
Thermal resistance(junction to heatsink) Double side cooled , clamping force 8.0 KN  
0.035 C/ W  
th( j-h )  
F
Mounting force  
10  
20  
KN  
g
m
W
t
Approximate weight  
255  
www.nellsemi.com  
Page 1 of 2  

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