Datasheet > 9013

9013

更新时间： 2023-12-06 20:03:44

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	857K
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小信号晶体管

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9013 数据手册

9013

NPN Silicon Epitaxial Planar Transistor

The transistor is subdivided into three groups, G, H and I,

according to its DC current gain. As complementary type

the PNP transistor 9012 is recommended.

Applications

1. Emitter 2. Base 3. Collector

• For switching and amplifier

• Especially suitable for AF-driver stages and low power

output stages

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

500

Collector Current

Power Dissipation

P_tot

625

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

200

Unit

Thermal Resistance Junction to Ambient

1 / 5

Dated: 07/06/2022 Rev: 02

12 3 4 5

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