是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC PACKAGE-2 | Reach Compliance Code: | compliant |
风险等级: | 5.91 | Is Samacsys: | N |
外壳连接: | ANODE | 配置: | SINGLE |
最大直流栅极触发电流: | 10 mA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 12.56 A | 断态重复峰值电压: | 400 V |
重复峰值反向电压: | 400 V | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
8P4J-AZ | NEC |
获取价格 |
Silicon Controlled Rectifier, 12.56A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC | |
8P4J-Z | NEC |
获取价格 |
8 A MOLD THYRISTOR | |
8P4J-Z | RENESAS |
获取价格 |
12.56A, 400V, SCR, PLASTIC PACKAGE-4 | |
8P4J-Z-AZ | NEC |
获取价格 |
Silicon Controlled Rectifier, 12.56A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC | |
8P4J-Z-E1-AZ | RENESAS |
获取价格 |
8P4J-Z-E1-AZ | |
8P4J-Z-E2 | NEC |
获取价格 |
Silicon Controlled Rectifier, 12.56A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC | |
8P4J-Z-E2-AZ | RENESAS |
获取价格 |
8P4J-Z-E2-AZ | |
8P4M | NEC |
获取价格 |
8 A THYRISTOR | |
8P4M-AZ | NEC |
获取价格 |
Silicon Controlled Rectifier, 12A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, | |
8P4M-Z-AZ | RENESAS |
获取价格 |
SILICON CONTROLLED RECTIFIER,400V V(DRM),8A I(T),TO-220AB |