PCMCIA SRAM Memory Card
SRA Series
SRAM Memory Card 256KB through 8MB
General Description
Features
• High Performance SRAM memory Card
The WEDC SRAM Series (SRA) memory cards offer a
high performance nonvolatile storage solution for code
and data storage, disk caching, and write intensive
mobile and embedded applications.
• Single 5 Volt Supply
- (3.3V/5V operation is available as an option)
• Fast Access times: 150ns
Packaged in PCMCIA type I or type II housing (type II
for cards with extended battery backup time), the
WEDC SRAM SRA series is based on 1 or 4Mbit
SRAM memories, providing densities from 256
Kilobytes to 8 Megabytes.
• x8/x16 PCMCIA standard interface
• Low Power CMOS technology provides very low
power and reliable data retention characteristics
- standby current < 100µA typical
The SRA series of SRAM memory cards requires a 5V
power supply and operates at speeds to 150ns. The
cards are based on advanced CMOS technology
providing very low power and reliable data retention
• Rechargeable Lithium battery with recharge circuitry
- eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time
•7 months - type I card
characteristics. WEDC’s SRAM cards contain
a
•18 months - type II card
rechargeable lithium battery and recharge circuitry,
eliminating the need for replaceable batteries found in
many SRAM cards.
typical based on 4MB (lower densities will
have greater storage times)
• Unlimited write cycles, no endurance issues
WEDC’s standard cards are shipped with WEDC’s
SRAM Logo. Cards are also available with blank
housings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact WEDC sales representative for further
information on Custom artwork.
• Optional Features:
• 2KB EEPROM attribute memory containing
CIS
• Optional Hardware Write Protect switch
• PC Card Standard Type I or Type II Form Factor
Block Diagram
4MB SRAM Card Shown
[A1..A19]
address
buffer
SRAM
SRAM
512K x 8
512K x 8
SRAM
SRAM
[A20..A22]
512K x 8
512K x 8
/CSHi
/CSLi
SRAM
512K x 8
SRAM
512K x 8
+
+
+ +
+
decoder
and
CE1#
CE2#
WE#
OE#
REG#
A0
/CSHi
control
logic
SRAM
512K x 8
SRAM
512K x 8
/CS-A
/RD
/WR
CTRL
/RD
/WR
[A1..A11]
/CS-A
/RD
/WR
S1
ATTRIBUTE
MEMORY
Vcc
WP
Write Prot
Switch
VS1
VS2
GND
NC
NC
CTRL
I/O BUFFER
[DO..D7]
[D8..D15]
[DO..D7]
[D8..D15]
Vcc
+
Notes: 1. pull down resistor (min 100k)
2. pull up resistor (min 10k)
Power Management
and
BVD1
BVD2
Battery Control
to internal
power
supply
+
Lithium Bat.
1
February 2002 Rev. 6
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