8N80
N-Channel Power MOSFET
FEATURES
RDS(ON) = 1.55Ω @ VGS = 10V
VDS=800V,ID=8A,
D
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(CRSS=13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
G
G
D
D
S
S
TO-220AB
TO-220F
150°C operation temperature
(8N80A)
(8N80AF)
D (Drain)
MECHANICAL DATA
TO-220F
Case: TO-220
/
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 2.30 grams (approximate)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
800
UNIT
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
VGS
Drain to Gate voltage
Gate to Source voltage
RGS=20KΩ
800
V
±30
TC=25°C
8
ID
Continuous Drain Current
TC=100°C
5.1
A
IDM
IAR
Pulsed Drain current(Note 1)
32
8
Avalanche current(Note 1)
EAR
EAS
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
IAR=8A, RGS=50Ω, VGS=10V
IAS=8A, L=25mH
17.8
850
4.5
mJ
V /ns
dv/dt
220 (1.75)
178 (1.43)
59 (0.48)
TO-3PB
PD
TO-220AB
TO-220F
W(W/°C)
Total power dissipation (Derate above 25°C)
Operation junction temperature
TC=25°C
TJ
-55 to 150
-55 to 150
300
Storage temperature
ºC
TSTG
TL
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
.
.
10 (1.1)
lbf in (N m)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 8A, VDD = 50V, L = 25mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
THERMAL RESISTANCE
Typ.
SYMBOL
PARAMETER
Min.
Max.
UNIT
TO-3PB
0.57
0.70
2.10
40
Rth(j-c)
TO-220AB
Thermal resistance, junction to case
ºC/W
TO-220F
TO-3PB
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB/TO-220F
62.5
8
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