Datasheet > 8N65F

8N65F

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	713K
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场效应晶体管

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8N65F 数据手册

8N65F

N-Channel Enhancement Mode Field Effect Transistor

FEATURES



RDS(ON) =1.4Ω@VGS = 10V.

Ultra Low gate charge (typical 28nC)

Low reverse transfer capacitance (CRSS = typical 12.0 pF)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Drain-Source voltage

V_DS

650

±30

Gate -Source voltage

V_GS

Continuous Drain current T_C=25℃

T_C=100℃

I_D

5.5

Single Pulse Avalanche Energy(Note2)

Avalanche Energy,Repetitive(Note1)

Avalanche Current(Note2)

E_AS

E_AR

600

14.7

I_AR

ISD

Continuous Drain-Source Current

Pulsed Drain-Source Current

Peak Diode Recovery dv/dt(Note4)

Power Dissipation

ISM

dv/dt

P_D

4.5

V/ns

110

2.6

R_θ

Junction-to-Case

℃/W

℃

R_θ

Junction-to-Ambient

62.5

-55 to +150

+150

Junction and Storage Temperature

Maximum Temperature for Soldering

T_J, T_stg

T_L

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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mail:lge@lgesemi.com

Revision:20170701-P1

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