VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
TO-220AC
TO-220 FULL-PAK
Base
cathode
• Fully isolated package (VINS = 2500 VRMS
• UL E78996 pending
)
2
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
1
1
3
3
Cathode
Anode
Cathode
Anode
DESCRIPTION/APPLICATIONS
VS-8ETX06PbF
VS-8ETX06FPPbF
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
PRODUCT SUMMARY
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
Package
TO-220AC, TO-220FP
IF(AV)
8 A
600 V
VR
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
VF at IF
3.0 V
trr (typ.)
TJ max.
Diode variation
15 ns
175 °C
Single die
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Repetitive peak reverse voltage
VRRM
600
V
TC = 143 °C
Average rectified forward current
IF(AV)
8
FULL-PAK
TC = 106 °C
A
Non-repetitive peak surge current
Repetitive peak forward current
IFSM
IFM
TJ = 25 °C
110
18
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 8 A
600
-
-
V
-
-
-
-
-
-
2.3
1.4
0.3
35
3.0
1.7
50
500
-
Forward voltage
VF
IR
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
17
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Document Number: 94032
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000