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8ETX06PBF_11

更新时间: 2024-09-18 08:11:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 186K
描述
Hyperfast Rectifier, 8 A FRED Pt

8ETX06PBF_11 数据手册

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VS-8ETX06PbF, VS-8ETX06FPPbF  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Benchmark ultralow forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
TO-220AC  
TO-220 FULL-PAK  
Base  
cathode  
• Fully isolated package (VINS = 2500 VRMS  
• UL E78996 pending  
)
2
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
1
1
3
3
Cathode  
Anode  
Cathode  
Anode  
DESCRIPTION/APPLICATIONS  
VS-8ETX06PbF  
VS-8ETX06FPPbF  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recover time, and soft recovery.  
PRODUCT SUMMARY  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
Package  
TO-220AC, TO-220FP  
IF(AV)  
8 A  
600 V  
VR  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
VF at IF  
3.0 V  
trr (typ.)  
TJ max.  
Diode variation  
15 ns  
175 °C  
Single die  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Repetitive peak reverse voltage  
VRRM  
600  
V
TC = 143 °C  
Average rectified forward current  
IF(AV)  
8
FULL-PAK  
TC = 106 °C  
A
Non-repetitive peak surge current  
Repetitive peak forward current  
IFSM  
IFM  
TJ = 25 °C  
110  
18  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.3  
1.4  
0.3  
35  
3.0  
1.7  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Document Number: 94032  
Revision: 28-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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