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8ETX06FPPBF

更新时间: 2024-11-01 06:33:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
7页 118K
描述
Hyperfast Rectifier, 8 A FRED PtTM

8ETX06FPPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.32Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, UL RECOGNIZED应用:HYPERFAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:110 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.024 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

8ETX06FPPBF 数据手册

 浏览型号8ETX06FPPBF的Datasheet PDF文件第2页浏览型号8ETX06FPPBF的Datasheet PDF文件第3页浏览型号8ETX06FPPBF的Datasheet PDF文件第4页浏览型号8ETX06FPPBF的Datasheet PDF文件第5页浏览型号8ETX06FPPBF的Datasheet PDF文件第6页浏览型号8ETX06FPPBF的Datasheet PDF文件第7页 
8ETX06PbF/8ETX06FPPbF  
Vishay High Power Products  
Hyperfast Rectifier,  
8 A FRED PtTM  
FEATURES  
• Hyperfast recovery time  
8ETX06PbF  
8ETX06FPPbF  
Pb-free  
• Low forward voltage drop  
Available  
• Low leakage current  
RoHS*  
COMPLIANT  
• 175 °C operating junction temperature  
• Fully isolated package (VINS = 2500 VRMS  
• UL E78996 approved  
)
Base  
cathode  
2
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION/APPLICATIONS  
1
1
3
3
Cathode  
Anode  
Cathode  
Anode  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recover time, and soft recovery.  
TO-220AC  
TO-220 FULL-PAK  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
PRODUCT SUMMARY  
trr (typical)  
15 ns  
8 A  
IF(AV)  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
VR  
600 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Repetitive peak reverse voltage  
VRRM  
600  
V
TC = 143 °C  
Average rectified forward current  
FULL-PAK  
IF(AV)  
8
TC = 106 °C  
A
Non-repetitive peak surge current  
Repetitive peak forward current  
IFSM  
IFM  
TJ = 25 °C  
110  
18  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.3  
1.4  
0.3  
35  
3.0  
1.7  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94032  
Revision: 08-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

8ETX06FPPBF 替代型号

型号 品牌 替代类型 描述 数据表
8ETX06PBF VISHAY

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