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8ETX06-1 PDF预览

8ETX06-1

更新时间: 2024-11-01 06:33:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管快速恢复能力电源快速恢复二极管
页数 文件大小 规格书
7页 125K
描述
Hyperfast Rectifier, 8 A FRED PtTM

8ETX06-1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.7Is Samacsys:N
其他特性:FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:HYPERFAST RECOVERY POWER RECTIFIER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:110 A
元件数量:1相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.024 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

8ETX06-1 数据手册

 浏览型号8ETX06-1的Datasheet PDF文件第2页浏览型号8ETX06-1的Datasheet PDF文件第3页浏览型号8ETX06-1的Datasheet PDF文件第4页浏览型号8ETX06-1的Datasheet PDF文件第5页浏览型号8ETX06-1的Datasheet PDF文件第6页浏览型号8ETX06-1的Datasheet PDF文件第7页 
8ETX06S/8ETX06-1  
Vishay High Power Products  
Hyperfast Rectifier,  
8 A FRED PtTM  
FEATURES  
8ETX06S  
8ETX06-1  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
3
1
N/C  
3
1
N/C  
Anode  
Anode  
D2PAK  
TO-262  
These devices are intended for use in PFC boost stage in  
the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
PRODUCT SUMMARY  
trr (typical)  
15 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
IF(AV)  
8 A  
VR  
600 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 143 °C  
TJ = 25 °C  
8
110  
IFSM  
A
IFM  
18  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.3  
1.4  
0.3  
35  
3.0  
1.7  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Document Number: 93937  
Revision: 08-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

8ETX06-1 替代型号

型号 品牌 替代类型 描述 数据表
VS-8ETX06-1PBF VISHAY

完全替代

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND

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