Datasheet > 8E2TX06-M

8E2TX06-M

更新时间： 2024-11-07 08:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	174K
描述
Hyperfast Rectifier, 8 A FRED Pt?

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8E2TX06-M 数据手册

VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time, extremely low Q_rr

• 175 °C maximum operating junction temperature

• For PFC CCM operation

• True 2 pin package

• Low forward voltage drop

2L TO-220AC

2L TO-220 FULL-PAK

• Low leakage current

Base

cathode

• Fully isolated package (V_INS= 2500 V_RMS

)

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

Cathode

Anode

Cathode

Anode

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

VS-8E2TX06

VS-8E2TX06FP

PRODUCT SUMMARY

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

Package

2L TO-220AC, 2L TO-220 FP

I_F(AV)

8 A

600 V

V_R

These devices are intended for use in PFC boost stage in the

ac-to-dc section of SMPS, inverters or as freewheeling

diodes.

V_Fat I_F

3.2 V

t_rr(typ.)

T_Jmax.

Diode variation

13 ns

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

V_RRM

600

T_C= 129 °C

_C= 71 °C

T_J= 25 °C

Average rectified forward current

I_F(AV)

FULL-PAK

Non-repetitive peak surge current

Peak repetitive forward current

I_FSM

I_FM

Operating junction and storage temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

2.5

1.6

0.3

3.2

2.0

400

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Document Number: 93171

Revision: 18-Aug-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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