Datasheet > 8A1

8A1

更新时间： 2023-12-06 19:52:49

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	872K
描述
R-6

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中文翻译

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数据手册

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8A1 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

R-6 Plastic-Encapsulate Diodes

G eneral Purpose Rectifier Diodes

8A05 THRU 8A10

Features

● I_F(AV)

R-6

● VRRM

50V-1000V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● 8AX

X From 05 To 10

Limiting Values(Absolute Maximum Rating)

Item

Symbol Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

100

800 1000

600

200 400

MaximumRMS Voltage

140 280 420 560 700

V _RMS

V_DC

Maximum DC Blocking Voltage

100

800 1000

600

200 400

60Hz Half-sine wave，

Resistance load，T _L=75 ℃

Average Forward Current

8.0

I_F(AV)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

400

I_FSM

Operation Junction and

Storage Temperature Range

T_J,T_STG

℃

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

Max

Symbol Unit

Test Condition

Item

V_F

I_F=8.0A

Maximum Peak Forward Voltage

1.1

I_RRM1

T =25℃

5.0

V_RM=V_RRM

Maximum Peak Reverse Current

Typical junction capacitance

μA

I_RRM2

T =125℃

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

C_J

120

Between junction and ambient

R_θ

J-A

℃/

Typical Thermal Resistance

R_θ

Between junction and Lead

J-L

Notes:

Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

www.jscj-elec.com

Rev. - 1.1

12 3 4

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