Datasheet > 8A05

8A05

更新时间： 2024-02-02 21:50:40

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	76K
描述
GENERAL PURPOSE SILICON RECTIFIER

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技术参数
数据手册

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8A05 技术参数

Case Style：	R-6	IF（A）：	8.0
Maximum recurrent peak reverse voltage：	50	Peak forward surge current：	400
Maximum instantaneous forward voltage：	1.0	@IVA(A)：	8.0
Maximum reverse current：	10.0	TRR(nS)：	/
class：	Diodes

8A05 数据手册

8A05 THRU 8A10

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current -

8.0 Amperes

R-6

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

1.0 (25.4)

MIN.

molded plastic technique

0.360 (9.1)

0.340(8.6)

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

DIA.

0.360(9.1)

0.340(8.6)

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

MECHANICAL DATA

0.052 (1.3)

0.048 (1.2)

Case: R-6 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.072 ounce, 2.05 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

UNITS

800 1000 VOLTS

560 700

VOLTS

8A05 8A1

8A2

8A4

8A6

8A8

8A10

MDD Catalog

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600

420

600

VRRM

VRMS

VDC

100

800 1000 VOLTS

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=60 C

Peak forward surge current

I(AV)

8.0

Amps

IFSM

600

1.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 8.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

10.0

100

TA=100 C

Typical junction capacitance (NOTE 1)

RθJA

C/W

150

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

10.0

TJ,TSTG

-50 to +150

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

MDD ELECTRONIC

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