BYS12–90
Vishay Semiconductors
Schottky Barrier Rectifier
Features
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
15 811
Applications
Polarity protection
Low voltage, high frequency rectifiers
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage=
Repetitive peak reverse voltage
Test Conditions
Type
Symbol
V =
Value
90
Unit
V
R
V
RRM
Peak forward surge current
Average forward current
t =10ms, half sinewave
p
I
I
30
1.5
A
A
FSM
FAV
Junction and storage
temperature range
T =T
–55...+150
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction lead
Test Conditions
Symbol
Value
25
150
125
100
Unit
K/W
T =constant
L
R
thJL
mounted on epoxy–glass hard tissue
2
Junction ambient mounted on epoxy–glass hard tissue, 50mm 35 m Cu
R
thJA
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu
2
3
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
I =1A
750
mV
360
F
Forward voltage
Reverse current
V
F
I =15mA
F
V =V
100
1
A
mA
R
RRM
RRM
I
R
V =V
R
, T =100 C
j
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Document Number 86015
Rev. 3, 08-Sep-00