Datasheet > 8550SS

8550SS

更新时间： 2024-09-23 12:36:47

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	139K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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8550SS 数据手册

RoHS

8550SS

8550SS TRANSISTOR (PNP)

FEATURES

TO-92

Power dissipation

P_CM:

W (Tamb=25℃)

1. EMITTER

2. COLLECTOR

3. BASE

Collector current

I_CM:

-1.5

Collector-base voltage

V_(BR)CBO

- 40

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= -100µA , I_E=0

I_C= -0.1mA , I_B=0

I_E= -100µA, I_C=0

MIN

-40

-25

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB= -40V, I_E=0

-0.1

300

µA

ΜA

Collector cut-off current

I_CEO

V_CE= -20V, I_E=0

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

h_{FE (1)}

V_CE= -1V, I_C=-100 mA

V_CE=-1V , I_C=-800 mA

I_C=-800 m, I_B=-80 mA

I_C=-800mA, I_B=-80 mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.5

-1.2

V_CE=-10V, I_C=-50mA

Transition frequency

100

MHz

f_T

f =30 MHz

CLASSIFICATION OF h_FE(1)

Rank

WEJ ELECTRONIC CO.,LTD

Range

85-160

120-200

160-300

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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