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8550S PDF预览

8550S

更新时间: 2024-11-01 14:54:59
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 784K
描述
双极型晶体管

8550S 技术参数

极性:PNPCollector-emitter breakdown voltage:25
Collector Current - Continuous:0.5DC current gain - Min:85
DC current gain - Max:400Transition frequency:150
Package:TO-92Storage Temperature Range:-55-150
class:Transistors

8550S 数据手册

 浏览型号8550S的Datasheet PDF文件第2页 
8550S(PNP)  
TO-92 Bipolar Transistors  
TO-92  
1.  
EMITTER  
2. COLLECTOR  
3. BASE  
Features  
Excellent hFE linearity  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
-40  
Units  
V
-25  
V
Dimensions in inches and (millimeters)  
-5  
V
Collector Current -Continuous  
Collector Dissipation  
-500  
625  
mA  
mW  
PC  
TJ  
Junction Temperature  
150  
Tstg  
Junction and Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
-40  
-25  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -100uA, IE=0  
IC= -1mA, IB=0  
V
IE= -100uA, IC=0  
VCB= -40V, IE=0  
V
-0.1  
-0.1  
-0.1  
400  
uA  
uA  
uA  
Collector cut-off current  
ICEO  
VCE= -20V,IB=0  
Emitter cut-off current  
IEBO  
VEB= - 3V, IC=0  
hFE(1)  
VCE= -1V, IC= -50mA  
VCE= -1V, IC= -500mA  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
85  
50  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
-0.6  
-1.2  
V
V
V
CE=- 6V, IC=-20mA  
Transition frequency  
fT  
150  
MHz  
f =30MHz  
CLASSIFICATION OF hFE  
(1)  
B
C
D
D3  
300-400  
Rank  
Range  
85-160  
120-200  
160-300  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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