Datasheet > 8550HXLT1

8550HXLT1

更新时间： 2024-11-27 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	495K
描述
General Purpose Transistors

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中文翻译

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数据手册

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8550HXLT1 数据手册

8550HXLT1

WILLAS

General Purpose Transistors

PNP Silicon

FEATURE

ƽHigh current capacity in compact package.

I_C=1.5A.

ƽEpitaxial planar type.

ƽPNP complement: 8550H

We declare that the material of product compliance with RoHS requirements.

Pb-Free package is available

SOT–23

RoHS product for packing code suffix ”G”

COLLECTOR

Halogen free product for packing code suffix “H”

DEVICE MARKING AND ORDERING INFORMATION

BASE

Shipping

Device

Marking

8550HQLT1

3000/Tape&Reel

1HD

EMITTER

3000/Tape&Reel

8550HRLT1

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CBO

V_EBO

Collector Current-continuoun

1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

417

°C/W

°C

Operating Junction and Storage Temperature

-55 to +150

2012-07

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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