Datasheet > 8550_2A

8550_2A

更新时间： 2023-12-06 20:08:56

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8550_2A 数据手册

8550 (2A)

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially

suitable for AF-driver stages and low power output

stages.

The transistor is subdivided into two groups C and

D according to its DC current gain.

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Base Current

-I_B

100

Power Dissipation

P_tot

Junction Temperature

T_j

150

Storage Temperature Range

T_Stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 1 V, -I_C= 5 mA

at -V_CE= 1 V, -I_C= 100 mA

h_FE

120

160

Current Gain Group C

200

300

at -V_CE= 1 V, -I_C= 1.5 A

Collector Base Cutoff Current

at -V_CB= 35 V

Emitter Base Cutoff Current

at -V_EB= 6 V

Collector Base Breakdown Voltage

at -I_C= 100 µA

Collector Emitter Breakdown Voltage

at -I_C= 2 mA

-I_CBO

-I_EBO

100

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

-V_BE(on)

f_T

Emitter Base Breakdown Voltage

at -I_E= 100 µA

Collector Emitter Saturation Voltage

at -I_C= 1.5 A, -I_B= 100 mA

Base Emitter Saturation Voltage

at -I_C= 1.5 A, -I_B= 100 mA

Base Emitter On Voltage

at -I_C= 10 mA, -V_CE= 1 V

Gain Bandwidth Product

at -V_CE= 10 V, -I_C= 50 mA

Collector Base Capacitance

at -V_CB= 10 V, f = 1 MHz

0.5

1.2

120

MHz

C_ob

Dated: 05/04/2016 CL Rev: 01

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