PRELIMINARY SPECIFICATION
PE84244
Military Operating Temperature Range
Product Description
SPDT MOSFET RF Switch
Features
The PE84244 MOSFET RF Switch is designed to cover a
broad range of applications from DC to 3.0 GHz. This switch
integrates on-board CMOS control logic with a low voltage
CMOS compatible control input. Using a +3-volt nominal
power supply voltage, a 1 dB compression point of +27 dBm
can be achieved. The PE84244 also exhibits excellent
isolation of 28 dB at 2.0 GHz and is offered in a small 8-lead
MSOP package.
• Single +3.0-volt Power Supply
• Low Insertion loss: 0.70 dB up
to 2.0 GHz
• High isolation of 39 dB at 1.0
GHz, 28 dB at 2.0 GHz, typical
• Typical 1 dB compression of
+27 dBm
The PE4244 MOSFET RF Switch is manufactured in
Peregrine’s patented Ultra Thin Silicon (UTSi) CMOS
process, offering the performance of GaAs with the economy
and integration of conventional CMOS.
• Single-pin CMOS logic control
• Packaged in 8-lead MSOP
Figure 1. Functional Schematic Diagram
Figure 2. Package Type
RFCommon
RF1
RF2
8-lead
MSOP
CTRL
Table 1. Electrical Specifications -55 °C to +125 °C, VDD = 3 V (ZS = ZL = 50 Ω)
Parameter
Operation Frequency1
Insertion Loss
Conditions
Minimum
Typical
Maximum
3000
Units
MHz
dB
DC
2000 MHz
2000 MHz
0.7
28
0.95
Isolation – RFCommon to
RF1/RF2
25
dB
Isolation – RF1 to RF2
2000 MHz
2000 MHz
24
18
27
25
dB
dB
Return Loss
‘ON’ Switching Time
‘OFF’ Switching Time
Video Feedthrough2
Input 1 dB Compression
Input IP3
CTRL to 0.1 dB final value, 2 GHz
CTRL to 25 dB isolation, 2 GHz
200
90
ns
ns
15
mVpp
dBm
dBm
2000 MHz
25
40
27
2000 MHz, 14dBm
42
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a
50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
PEREGRINE SEMICONDUCTOR CORP. | http://www.peregrine-semi.com
Copyright Peregrine Semiconductor Corp. 2003
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