是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-CUPM-H3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 100 mA |
最大直流栅极触发电压: | 2 V | JEDEC-95代码: | TO-209AC |
JESD-30 代码: | O-CUPM-H3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大均方根通态电流: | 125 A |
断态重复峰值电压: | 400 V | 重复峰值反向电压: | 400 V |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | 40 |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
82RKI60 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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82RKI60M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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82RKI60PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC |
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82RKI80 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Elem |
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82RKI80M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Elem |
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82RKI80PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC |
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82S09 | ETC |
获取价格 |
576-BIT BIPOLAR RAM (64 X 9) |
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82S09/BXA | YAGEO |
获取价格 |
Standard SRAM, 64X9, 80ns, TTL, CDIP28 |
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82S100 | ETC |
获取价格 |
Field Programmable Logic Array |
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82S100/B3A | NXP |
获取价格 |
IC OT PLD, 80 ns, CQCC28, Programmable Logic Device |
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