是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-CUPM-H3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.75 |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 500 V/us |
最大直流栅极触发电流: | 100 mA | 最大直流栅极触发电压: | 2 V |
JEDEC-95代码: | TO-209AC | JESD-30 代码: | O-CUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
最大均方根通态电流: | 125 A | 断态重复峰值电压: | 200 V |
重复峰值反向电压: | 200 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | 40 | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
82RKI20M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 200V V(DRM), 200V V(RRM), 1 Elem |
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82RKI20PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AC |
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82RKI40 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 400V V(DRM), 400V V(RRM), 1 Elem |
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82RKI40M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 400V V(DRM), 400V V(RRM), 1 Elem |
![]() |
82RKI40PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC |
![]() |
82RKI60 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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82RKI60M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
![]() |
82RKI60PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC |
![]() |
82RKI80 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Elem |
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82RKI80M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Elem |
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