生命周期: | Active | 零件包装代码: | TO-94 |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 标称电路换相断开时间: | 110 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 500 V/us |
最大直流栅极触发电流: | 120 mA | 最大直流栅极触发电压: | 3.5 V |
最大维持电流: | 200 mA | JEDEC-95代码: | TO-209AC |
JESD-30 代码: | O-MUPM-H3 | 最大漏电流: | 15 mA |
通态非重复峰值电流: | 1900 A | 元件数量: | 1 |
端子数量: | 3 | 最大通态电流: | 80000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大均方根通态电流: | 125 A | 断态重复峰值电压: | 800 V |
重复峰值反向电压: | 800 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 触发设备类型: | SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
82RIA80PBF | VISHAY |
获取价格 |
Phase Control Thyristors (Stud Version), 80 A |
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82RKI10 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 100V V(DRM), 100V V(RRM), 1 Elem |
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82RKI100 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 El |
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82RKI100M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 El |
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82RKI100PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A |
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82RKI10M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 100V V(DRM), 100V V(RRM), 1 Elem |
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82RKI120 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 El |
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82RKI120M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 El |
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82RKI20 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 200V V(DRM), 200V V(RRM), 1 Elem |
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82RKI20M | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 200V V(DRM), 200V V(RRM), 1 Elem |
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